| Presentation | 2011-08-25 1.3 μm InAs/GaAs Quantum Dot Lasers on Si Substrates by Direct Semiconductor Bonding Katsuaki TANABE, Katsuyuki WATANABE, Yasuhiko ARAKAWA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | III-V semiconductor compound light sources monolithically integrated on Si substrates or waveguides would be promising for the realization of photonic integrated circuits. Specifically quantum dot lasers yield low lasing threshold current and high temperature stability and therefore are suitable for high-density integration. In this work, we have developed low-resistivity GaAs/Si direct wafer bonding technique and successfully fabricated 1.3 μm InAs/GaAs quantum dot lasers on Si substrates. Our conductive direct-bonded heterostructures enables both electrical injection and optical coupling, and therefore gives more flexibility in design and operation of photonic integrated circuits in contrast to conventional SiO_2- and metal-mediated bonding. Our fabricated laser device has achieved a lasing threshold current density of 205 A/cm^2, the lowest of any kind of semiconductor laser on Si. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Quantum Dots / Semiconductor Lasers / Silicon Photonics / Wafer Bonding |
| Paper # | EMD2011-42,CPM2011-86,OPE2011-77,LQE2011-40 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2011/8/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 1.3 μm InAs/GaAs Quantum Dot Lasers on Si Substrates by Direct Semiconductor Bonding |
| Sub Title (in English) | |
| Keyword(1) | Quantum Dots |
| Keyword(2) | Semiconductor Lasers |
| Keyword(3) | Silicon Photonics |
| Keyword(4) | Wafer Bonding |
| 1st Author's Name | Katsuaki TANABE |
| 1st Author's Affiliation | Institute for Nano Quantum Information Electronics, University of Tokyo() |
| 2nd Author's Name | Katsuyuki WATANABE |
| 2nd Author's Affiliation | Institute for Nano Quantum Information Electronics, University of Tokyo |
| 3rd Author's Name | Yasuhiko ARAKAWA |
| 3rd Author's Affiliation | Institute for Nano Quantum Information Electronics, University of Tokyo:Institute of Industrial Science, University of Tokyo |
| Date | 2011-08-25 |
| Paper # | EMD2011-42,CPM2011-86,OPE2011-77,LQE2011-40 |
| Volume (vol) | vol.111 |
| Number (no) | 184 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |