Presentation | 2011-08-10 Hydrogen effects on the properties of Si- and N-coincorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition Saori OKUNO, Soshi MIURA, Ryosuke KAMATA, Hideki NAKAZAWA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | To further improve the properties of diamond-like carbon (DLC) films, we have deposited Si- and N-coincorporated DLC (Si-N-DLC) films by radio-frequency plasma-enhanced chemical vapor deposition using hexamethyldisilazane (HMDS) as a Si and N source, and investigated in detail the effects of dilution gas on the film properties. CH_4 and HMDS were used to deposit Si-N-DLC films, and they were diluted with Ar or H_2 during deposition. A DC bias applied to the substrate was used to increase the incident ion energy. The internal stress and friction coefficient decreased and the adhesion strength increased with increasing HMDS flow ratio [HMDS/(HMDS+CH_4)]. It was found that H2 dilution was effective in suppressing the formation of particles and further decreasing the friction coefficient and increasing the adhesion strength and wear resistance. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Diamond-like carbon / Plasma-enhanced chemical vapor deposition / Silicon / Nitrogen |
Paper # | CPM2011-62 |
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Conference Information | |
Committee | CPM |
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Conference Date | 2011/8/3(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Hydrogen effects on the properties of Si- and N-coincorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition |
Sub Title (in English) | |
Keyword(1) | Diamond-like carbon |
Keyword(2) | Plasma-enhanced chemical vapor deposition |
Keyword(3) | Silicon |
Keyword(4) | Nitrogen |
1st Author's Name | Saori OKUNO |
1st Author's Affiliation | Faculty of Science and Technology, Hirosaki University() |
2nd Author's Name | Soshi MIURA |
2nd Author's Affiliation | Faculty of Science and Technology, Hirosaki University |
3rd Author's Name | Ryosuke KAMATA |
3rd Author's Affiliation | Faculty of Science and Technology, Hirosaki University |
4th Author's Name | Hideki NAKAZAWA |
4th Author's Affiliation | Faculty of Science and Technology, Hirosaki University |
Date | 2011-08-10 |
Paper # | CPM2011-62 |
Volume (vol) | vol.111 |
Number (no) | 176 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |