Presentation 2011-08-10
Hydrogen effects on the properties of Si- and N-coincorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition
Saori OKUNO, Soshi MIURA, Ryosuke KAMATA, Hideki NAKAZAWA,
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Abstract(in English) To further improve the properties of diamond-like carbon (DLC) films, we have deposited Si- and N-coincorporated DLC (Si-N-DLC) films by radio-frequency plasma-enhanced chemical vapor deposition using hexamethyldisilazane (HMDS) as a Si and N source, and investigated in detail the effects of dilution gas on the film properties. CH_4 and HMDS were used to deposit Si-N-DLC films, and they were diluted with Ar or H_2 during deposition. A DC bias applied to the substrate was used to increase the incident ion energy. The internal stress and friction coefficient decreased and the adhesion strength increased with increasing HMDS flow ratio [HMDS/(HMDS+CH_4)]. It was found that H2 dilution was effective in suppressing the formation of particles and further decreasing the friction coefficient and increasing the adhesion strength and wear resistance.
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Keyword(in English) Diamond-like carbon / Plasma-enhanced chemical vapor deposition / Silicon / Nitrogen
Paper # CPM2011-62
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Committee CPM
Conference Date 2011/8/3(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Hydrogen effects on the properties of Si- and N-coincorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition
Sub Title (in English)
Keyword(1) Diamond-like carbon
Keyword(2) Plasma-enhanced chemical vapor deposition
Keyword(3) Silicon
Keyword(4) Nitrogen
1st Author's Name Saori OKUNO
1st Author's Affiliation Faculty of Science and Technology, Hirosaki University()
2nd Author's Name Soshi MIURA
2nd Author's Affiliation Faculty of Science and Technology, Hirosaki University
3rd Author's Name Ryosuke KAMATA
3rd Author's Affiliation Faculty of Science and Technology, Hirosaki University
4th Author's Name Hideki NAKAZAWA
4th Author's Affiliation Faculty of Science and Technology, Hirosaki University
Date 2011-08-10
Paper # CPM2011-62
Volume (vol) vol.111
Number (no) 176
Page pp.pp.-
#Pages 6
Date of Issue