Presentation 2011-08-10
Direct Nitridation of SiC Surface and Characterization of Nitride/SiC Interface
Takashi SAKAI, Mitsunori HEMMI, Yusuke MURATA, Shinichiro SUZUKI, Tomohiko YAMAKAMI, Rinpei HAYASIBE, Kiichi KAMIMURA,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A nitride layer was formed on a SiC surface by direct nitridation method to use an interfacial layer of the SiC MIS structure. The XPS measurement of nitrided surface showed that the diffusion length of nitrogen in the nitridation layer was found to be extremely small, and that the direct nitridation layer was easily oxidized by the residual oxygen in SiO_2 CVD system. The direct nitridation was effective to reduce the interface state density between the insulating layer and the 4H-SiC substrate.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SiC / direct nitridation / MOS / interface states
Paper # CPM2011-58
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Conference Information
Committee CPM
Conference Date 2011/8/3(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Direct Nitridation of SiC Surface and Characterization of Nitride/SiC Interface
Sub Title (in English)
Keyword(1) SiC
Keyword(2) direct nitridation
Keyword(3) MOS
Keyword(4) interface states
1st Author's Name Takashi SAKAI
1st Author's Affiliation Faculty of Engineering, Shinshu University()
2nd Author's Name Mitsunori HEMMI
2nd Author's Affiliation Faculty of Engineering, Shinshu University
3rd Author's Name Yusuke MURATA
3rd Author's Affiliation Faculty of Engineering, Shinshu University
4th Author's Name Shinichiro SUZUKI
4th Author's Affiliation Faculty of Engineering, Shinshu University
5th Author's Name Tomohiko YAMAKAMI
5th Author's Affiliation Faculty of Engineering, Shinshu University
6th Author's Name Rinpei HAYASIBE
6th Author's Affiliation Faculty of Engineering, Shinshu University
7th Author's Name Kiichi KAMIMURA
7th Author's Affiliation Faculty of Engineering, Shinshu University
Date 2011-08-10
Paper # CPM2011-58
Volume (vol) vol.111
Number (no) 176
Page pp.pp.-
#Pages 4
Date of Issue