Presentation 2011-07-21
Design of Radical Sensor LSI with RF-CMOS Technology : Sensitivity Analysis of the Detecting Circuit of ESR
Shunsuke KIMURA, Junichi AKITA, Akio KITAGAWA,
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Abstract(in English) The detecting circuit of Electron Spin Resonance (ESR) for radical sensing and the detection sensitivity analysis of ESR signal are presented. The circuit is composed of probe-inductor for ESR measurement and cascode Low Noise Amplifier (LNA) which improves the detection sensitivity of ESR signal. ESR signal is obtained as a spectrum of the gain variation of the LNA as a function of the DC magnetic flux. As the result of circuit simulation, the detection sensitivity of ESR signal by the designed circuit is estimated at 90×10^<-3>fV/spin@RFin=-50dBm. It is possible to detect radicals included in a very small amount of sample with the proposed circuit which contributed to downsizing the ESR measurement system.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) radical / Electron Spin Resonance / RF-CMOS
Paper # ICD2011-24
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Conference Date 2011/7/14(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Design of Radical Sensor LSI with RF-CMOS Technology : Sensitivity Analysis of the Detecting Circuit of ESR
Sub Title (in English)
Keyword(1) radical
Keyword(2) Electron Spin Resonance
Keyword(3) RF-CMOS
1st Author's Name Shunsuke KIMURA
1st Author's Affiliation Natural Science & Technogy, Kanazawa University()
2nd Author's Name Junichi AKITA
2nd Author's Affiliation Kanazawa University
3rd Author's Name Akio KITAGAWA
3rd Author's Affiliation Kanazawa University
Date 2011-07-21
Paper # ICD2011-24
Volume (vol) vol.111
Number (no) 151
Page pp.pp.-
#Pages 5
Date of Issue