| Presentation | 2011-07-21 A Sense Amplifier with High Speed Pre-Charge Operation for Ultra-Low-Voltage SRAM Chotaro MASUDA, Tetsuya HIROSE, Yuji OSAKI, Nobutaka KUROKI, Masahiro NUMA, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We propose a current latch sense amplifier with a current-reuse technique (CLSA-w/CR). The CLSA-w/CR is capable of high-speed pre-charging with little increase in power dissipation. The CLSA-w/CR controls body bias voltages of pre-charge transistors in a conventional CLSA. Even though a forward body bias control over MOSFETs can achieve high-speed operation of the circuit, it induces large substrate leakage current and increases the power dissipation of the circuit. The CLSA-w/CR we propose, however, can achieve high-speed precharging without increasing power dissipation. We evaluated the performance of the CLSA-w/CR using SPICE with a set of 0.35- μm standard CMOS parameters. The pre-charge time decreased by 86.9% and the power dissipation increased by only 8.6% compared to that of a conventional CLSA. The CLSA-w/CR showed high-speed pre-charging with small power overhead. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Sense amplifier / SRAM / Low voltage operation / High speed / Back gate effect |
| Paper # | ICD2011-22 |
| Date of Issue |
| Conference Information | |
| Committee | ICD |
|---|---|
| Conference Date | 2011/7/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A Sense Amplifier with High Speed Pre-Charge Operation for Ultra-Low-Voltage SRAM |
| Sub Title (in English) | |
| Keyword(1) | Sense amplifier |
| Keyword(2) | SRAM |
| Keyword(3) | Low voltage operation |
| Keyword(4) | High speed |
| Keyword(5) | Back gate effect |
| 1st Author's Name | Chotaro MASUDA |
| 1st Author's Affiliation | Graduate School of Engineering, Kobe University() |
| 2nd Author's Name | Tetsuya HIROSE |
| 2nd Author's Affiliation | Graduate School of Engineering, Kobe University |
| 3rd Author's Name | Yuji OSAKI |
| 3rd Author's Affiliation | Graduate School of Engineering, Kobe University |
| 4th Author's Name | Nobutaka KUROKI |
| 4th Author's Affiliation | Graduate School of Engineering, Kobe University |
| 5th Author's Name | Masahiro NUMA |
| 5th Author's Affiliation | Graduate School of Engineering, Kobe University |
| Date | 2011-07-21 |
| Paper # | ICD2011-22 |
| Volume (vol) | vol.111 |
| Number (no) | 151 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |