| Presentation | 2011-07-04 The effect of oxidation and reduction annealing on Vfb shift in ITO/HfO_2 MOS capacitors Toshihide NABATAME, Hiroyuki YAMADA, Akihiko OHI, Tomoji OHISHI, Toyohiro CHIKYOW, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We investigated effect of oxidation and reduction annealing on Vfb for In_<0.9>Sn_<0.1> (ITO)/HfO_2 (4.9 nm)/SiO_2 MOS capacitors. The resistivity of ITO film, which consists of cubic structure, shows a almost same value regardless of oxidation and reduction annealing temperatures. The Vfb of ITO-gated MOS capacitors significantly shift in positive direction when the oxidation annealing temperature is at 250 ℃. The positive Vfb shift is saturated at 350 ℃. On the other hand, a negative Vfb shift appears as the reduction annealing temperature increases. Oxygen diffusion coefficient (D) of ITO film which is estimated from Pick's law, shows about a 1.8×10^<-19> m^2/s at 400 ℃ by using isotope ^<18>O tracer. It is almost same value of ionic ZrO_2 material which has high D. Therefore, we found that ITO film has high D. This suggests that oxygen introduction and removal in ITO gate electrode is one reason why the positive and negative Vfb shifts occur by annealing in oxidation and reduction ambient, respectively. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ITO / HfO_2 / Vfb shift / Oxygen diffusion coefficient / Oxidation and reduction annealing |
| Paper # | SDM2011-64 |
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| Committee | SDM |
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| Conference Date | 2011/6/27(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The effect of oxidation and reduction annealing on Vfb shift in ITO/HfO_2 MOS capacitors |
| Sub Title (in English) | |
| Keyword(1) | ITO |
| Keyword(2) | HfO_2 |
| Keyword(3) | Vfb shift |
| Keyword(4) | Oxygen diffusion coefficient |
| Keyword(5) | Oxidation and reduction annealing |
| 1st Author's Name | Toshihide NABATAME |
| 1st Author's Affiliation | MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science() |
| 2nd Author's Name | Hiroyuki YAMADA |
| 2nd Author's Affiliation | Shibaura Institute of Technology |
| 3rd Author's Name | Akihiko OHI |
| 3rd Author's Affiliation | MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science |
| 4th Author's Name | Tomoji OHISHI |
| 4th Author's Affiliation | Shibaura Institute of Technology |
| 5th Author's Name | Toyohiro CHIKYOW |
| 5th Author's Affiliation | MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science |
| Date | 2011-07-04 |
| Paper # | SDM2011-64 |
| Volume (vol) | vol.111 |
| Number (no) | 114 |
| Page | pp.pp.- |
| #Pages | 5 |
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