Presentation 2011-07-21
A Study of EM Simulation Modeling for Excitations using GSG Pads with Symmetric Circuit in On-Wafer Measurement
Takuichi HIRANO, Kenichi OKADA, Jiro HIROKAWA, Makoto ANDO,
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Abstract(in English) On-chip analog RF circuits are measured using GSG probes by contacting them onto pads. Electromagnetic simulation modeling including pads is sometimes necessary. Electromagnetic simulation modeling for excitations using GSG pads with symmetric circuit is investigated in this report. Excitation is modeled by voltage source between the ground and signal pads. Simulated results agreed very well with the measured ones. It is obtained from the simulated result that the effect of misalignment of probes is negligible.
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Keyword(in English) Electromagnetic Simulation Modeling / GSG Probe / Pad / On-Wafer Measurement / Millimeter-Wave / CMOS / Symmetric
Paper # MW2011-52,OPE2011-39,EST2011-38,MWP2011-20
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Committee EST
Conference Date 2011/7/14(1days)
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Registration To Electronic Simulation Technology (EST)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Study of EM Simulation Modeling for Excitations using GSG Pads with Symmetric Circuit in On-Wafer Measurement
Sub Title (in English)
Keyword(1) Electromagnetic Simulation Modeling
Keyword(2) GSG Probe
Keyword(3) Pad
Keyword(4) On-Wafer Measurement
Keyword(5) Millimeter-Wave
Keyword(6) CMOS
Keyword(7) Symmetric
1st Author's Name Takuichi HIRANO
1st Author's Affiliation Graduate School of Science and Engineering, Tokyo Institute of Technology()
2nd Author's Name Kenichi OKADA
2nd Author's Affiliation Graduate School of Science and Engineering, Tokyo Institute of Technology
3rd Author's Name Jiro HIROKAWA
3rd Author's Affiliation Graduate School of Science and Engineering, Tokyo Institute of Technology
4th Author's Name Makoto ANDO
4th Author's Affiliation Graduate School of Science and Engineering, Tokyo Institute of Technology
Date 2011-07-21
Paper # MW2011-52,OPE2011-39,EST2011-38,MWP2011-20
Volume (vol) vol.111
Number (no) 149
Page pp.pp.-
#Pages 6
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