Presentation 2011-07-28
DC-DC Converter with SiC Devices Considering Distribution System and Control Circuit
Ryosuke OHMA, Itsuo YUZURIHARA, Atsushi TAKAYANAGI,
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Abstract(in English) SiC is noticeable as a new generation power semiconductor device. In addition to diode, SiC-MOSFET is also released. This paper presents DC-DC converter which consists of SiC MOSFET and SiC-SBD are designed and examined. Characteristics of SiC such as dv/dt, tail current are compared with silicon IGBT. Furthermore, DC-DC converter consists of electric-capacitor-less topology without smoothing circuit, and it takes into consideration of percent impedance of distribution system. Control circuit is also introduced with DC-DC converter.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SiC / MOSFET / SBD / DC-DC converter
Paper # EE2011-7
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Conference Information
Committee EE
Conference Date 2011/7/21(1days)
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Paper Information
Registration To Energy Engineering in Electronics and Communications (EE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) DC-DC Converter with SiC Devices Considering Distribution System and Control Circuit
Sub Title (in English)
Keyword(1) SiC
Keyword(2) MOSFET
Keyword(3) SBD
Keyword(4) DC-DC converter
1st Author's Name Ryosuke OHMA
1st Author's Affiliation Kyosan Electric Mfg.Co.,Ltd.()
2nd Author's Name Itsuo YUZURIHARA
2nd Author's Affiliation Kyosan Electric Mfg.Co.,Ltd.
3rd Author's Name Atsushi TAKAYANAGI
3rd Author's Affiliation Kyosan Electric Mfg.Co.,Ltd.
Date 2011-07-28
Paper # EE2011-7
Volume (vol) vol.111
Number (no) 161
Page pp.pp.-
#Pages 5
Date of Issue