Presentation | 2011-07-28 DC-DC Converter with SiC Devices Considering Distribution System and Control Circuit Ryosuke OHMA, Itsuo YUZURIHARA, Atsushi TAKAYANAGI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | SiC is noticeable as a new generation power semiconductor device. In addition to diode, SiC-MOSFET is also released. This paper presents DC-DC converter which consists of SiC MOSFET and SiC-SBD are designed and examined. Characteristics of SiC such as dv/dt, tail current are compared with silicon IGBT. Furthermore, DC-DC converter consists of electric-capacitor-less topology without smoothing circuit, and it takes into consideration of percent impedance of distribution system. Control circuit is also introduced with DC-DC converter. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | SiC / MOSFET / SBD / DC-DC converter |
Paper # | EE2011-7 |
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Committee | EE |
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Conference Date | 2011/7/21(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Energy Engineering in Electronics and Communications (EE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | DC-DC Converter with SiC Devices Considering Distribution System and Control Circuit |
Sub Title (in English) | |
Keyword(1) | SiC |
Keyword(2) | MOSFET |
Keyword(3) | SBD |
Keyword(4) | DC-DC converter |
1st Author's Name | Ryosuke OHMA |
1st Author's Affiliation | Kyosan Electric Mfg.Co.,Ltd.() |
2nd Author's Name | Itsuo YUZURIHARA |
2nd Author's Affiliation | Kyosan Electric Mfg.Co.,Ltd. |
3rd Author's Name | Atsushi TAKAYANAGI |
3rd Author's Affiliation | Kyosan Electric Mfg.Co.,Ltd. |
Date | 2011-07-28 |
Paper # | EE2011-7 |
Volume (vol) | vol.111 |
Number (no) | 161 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |