| Presentation | 2011-06-30 Properties of AZO Thin Films Deposited at Room temperature by Low Voltage Sputtering Method Jun Kashiide, Katsuhito Nagoshi, Hidehiko Shimizu, Haruo Iwano, Takahiro Kawakami, Koutarou Nagata, Yasuo Fukushima, Nozomu Tsuboi, Takahiro Nomoto, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In order to examine that effect of high energy particles and fabricated conditions of targets, such as sintering temperature, deposition of AZO thin films was attempted at the room temperature by the RF-DC coupled magnetron sputtering method. As a result, the films deposited by low sputtering voltage had excellent c-axis orientation compared with the films deposited by high sputtering voltage. The films deposited by target sintered at 1300℃ had bad crystallinity compared with the films deposited using target sintered at 1100℃. The film deposited by target sintered at 1100℃ and low sputtering voltage had high mobility, low carrier concentration, and low resistivity in any substrate position compared with the film deposited by target sintered at 1100℃ and high sputtering voltage. Characteristic difference with the discharge voltage of the films deposited by target sintered at 1300℃ was small compared with the films deposited by target sintered at 1100℃. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ZnO thin film / RF-DC coupled MS method / crystallinity / Erosion |
| Paper # | EMD2011-18,CPM2011-54,OME2011-32 |
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| Conference Information | |
| Committee | EMD |
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| Conference Date | 2011/6/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electromechanical Devices (EMD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Properties of AZO Thin Films Deposited at Room temperature by Low Voltage Sputtering Method |
| Sub Title (in English) | |
| Keyword(1) | ZnO thin film |
| Keyword(2) | RF-DC coupled MS method |
| Keyword(3) | crystallinity |
| Keyword(4) | Erosion |
| 1st Author's Name | Jun Kashiide |
| 1st Author's Affiliation | Graduate School of Science and Technology, Niigata University() |
| 2nd Author's Name | Katsuhito Nagoshi |
| 2nd Author's Affiliation | Graduate School of Science and Technology, Niigata University |
| 3rd Author's Name | Hidehiko Shimizu |
| 3rd Author's Affiliation | Faculty of Engineering, Niigata University |
| 4th Author's Name | Haruo Iwano |
| 4th Author's Affiliation | Faculty of Engineering, Niigata University |
| 5th Author's Name | Takahiro Kawakami |
| 5th Author's Affiliation | Faculty of Engineering, Niigata University |
| 6th Author's Name | Koutarou Nagata |
| 6th Author's Affiliation | Faculty of Engineering, Niigata University |
| 7th Author's Name | Yasuo Fukushima |
| 7th Author's Affiliation | Faculty of Engineering, Niigata University |
| 8th Author's Name | Nozomu Tsuboi |
| 8th Author's Affiliation | Faculty of Engineering, Niigata University |
| 9th Author's Name | Takahiro Nomoto |
| 9th Author's Affiliation | Faculty of Engineering, Niigata University |
| Date | 2011-06-30 |
| Paper # | EMD2011-18,CPM2011-54,OME2011-32 |
| Volume (vol) | vol.111 |
| Number (no) | 108 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |