Presentation 2011-07-01
A Memristor-based Synaptic Device having an Asymmetric STDP Time Window
Taku ADACHI, Nobuo AKOU, Tetsuya ASAI, Masato MOTOMURA,
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Abstract(in English) We propose a memristor-based STDP synaptic device having an asymmetric time window. This device consists of a bipolar resistive-RAM (ReRAM), a capacitor, four nMOSFETs, and two pMOSFETs. First, we review fundamental characteristics of bipolar ReRAMs as well as the behavioral model that we use in this study. We also introduce our preceding study with respect to the development of memristive STDP devices having a causal role of a presynaptic neuron in driving a postsynaptic one. In this paper, we extend the original STDP synaptic device. Through extensive SPICE simulations, we demonstrate that conductance of our STDP device is certainly modulated (increased, decreased, and held) by the input spike timing, and that the proposed device plays causal and anti-causal roles in the synaptic plasticity.
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Keyword(in English) neurodevices / Resistive RAM(ReRAM) / memristor / STDP synapse
Paper # NLP2011-36
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Committee NLP
Conference Date 2011/6/23(1days)
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Registration To Nonlinear Problems (NLP)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Memristor-based Synaptic Device having an Asymmetric STDP Time Window
Sub Title (in English)
Keyword(1) neurodevices
Keyword(2) Resistive RAM(ReRAM)
Keyword(3) memristor
Keyword(4) STDP synapse
1st Author's Name Taku ADACHI
1st Author's Affiliation Graduate School of Information Science and Technology Hokkaido University()
2nd Author's Name Nobuo AKOU
2nd Author's Affiliation Graduate School of Information Science and Technology Hokkaido University
3rd Author's Name Tetsuya ASAI
3rd Author's Affiliation Graduate School of Information Science and Technology Hokkaido University
4th Author's Name Masato MOTOMURA
4th Author's Affiliation Graduate School of Information Science and Technology Hokkaido University
Date 2011-07-01
Paper # NLP2011-36
Volume (vol) vol.111
Number (no) 106
Page pp.pp.-
#Pages 6
Date of Issue