Presentation | 2011-05-26 L-band Partially-impedance matched GaN FET with 360W Output Power and 65% Power Added Efficiency Koji YAMANAKA, Norihiro YUNOUE, Shin CHAKI, Masatoshi NAKAYAMA, Yoshihito HIRANO, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In this paper, a high power and high efficiency partially-impedance matched GaN FET operating at L-band is presented. Recently, many over 100W output power GaN HEMT amplifiers have been developed. Especially, much attention is paid for Class-E GaN HEMT amplifiers, which will be used in mobile communication infrastructure systems. In general, class-E operation mode is used for such amplifiers for its simplicity. However there is a principle limitation of operation frequency or output power for class-E operation. In this paper a new class of amplifier is developed to overcome the limitation. By realizing intermediate operation mode between class-E and class-F, 360W output power and 65% power added efficiency was successfully obtained. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN HEMT / High-voltage techniques / MODFET power amplifiers |
Paper # | EMCJ2011-17,MW2011-14,EST2011-10 |
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Conference Information | |
Committee | EST |
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Conference Date | 2011/5/19(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electronic Simulation Technology (EST) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | L-band Partially-impedance matched GaN FET with 360W Output Power and 65% Power Added Efficiency |
Sub Title (in English) | |
Keyword(1) | GaN HEMT |
Keyword(2) | High-voltage techniques |
Keyword(3) | MODFET power amplifiers |
1st Author's Name | Koji YAMANAKA |
1st Author's Affiliation | Mitsubishi Electric Corporation Information Technology R&D Center() |
2nd Author's Name | Norihiro YUNOUE |
2nd Author's Affiliation | Mitsubishi Electric Corporation Communication Systems Center |
3rd Author's Name | Shin CHAKI |
3rd Author's Affiliation | Mitsubishi Electric Corporation High Frequency & Optical Semiconductor Division |
4th Author's Name | Masatoshi NAKAYAMA |
4th Author's Affiliation | Mitsubishi Electric Corporation Information Technology R&D Center |
5th Author's Name | Yoshihito HIRANO |
5th Author's Affiliation | Mitsubishi Electric Corporation Information Technology R&D Center |
Date | 2011-05-26 |
Paper # | EMCJ2011-17,MW2011-14,EST2011-10 |
Volume (vol) | vol.111 |
Number (no) | 66 |
Page | pp.pp.- |
#Pages | 6 |
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