| Presentation | 2011-05-19 Growth of GaN and AlGaN on β-Ga_2O_3(100) substrate Shun Ito, Kenichiro Takeda, Kengo Nagata, Hiroki Aoshima, Kosuke Takehara, Motoaki Iwaya, Tetuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | β-Ga_2O_3 is one of the most attractive substrates for AlGaN-based UV light-emitting-diodes (LEDs). Its transparency up to 260 nm wavelength and n-type conductivity can lead to small absorptions of UV light in β-Ga_2O_3 and possible vertical structures of the LEDs. In this study, we investigated the impact of thermal annealing temperature of the β-Ga_2O_3 substrate. We characterized surface roughness of (100) β-Ga_2O_3 after annealing with different temperatures and crystal qualities of GaN and AlGaN on the (100)β-Ga_2O_3 by MOVPE. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | β-Ga_2O_3(100) / thermal annealing / GaN / MOVPE |
| Paper # | ED2011-16,CPM2011-23,SDM2011-29 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2011/5/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth of GaN and AlGaN on β-Ga_2O_3(100) substrate |
| Sub Title (in English) | |
| Keyword(1) | β-Ga_2O_3(100) |
| Keyword(2) | thermal annealing |
| Keyword(3) | GaN |
| Keyword(4) | MOVPE |
| 1st Author's Name | Shun Ito |
| 1st Author's Affiliation | Fac. Sci. & Eng., Meijo Univ.() |
| 2nd Author's Name | Kenichiro Takeda |
| 2nd Author's Affiliation | Fac. Sci. & Eng., Meijo Univ. |
| 3rd Author's Name | Kengo Nagata |
| 3rd Author's Affiliation | Fac. Sci. & Eng., Meijo Univ. |
| 4th Author's Name | Hiroki Aoshima |
| 4th Author's Affiliation | Fac. Sci. & Eng., Meijo Univ. |
| 5th Author's Name | Kosuke Takehara |
| 5th Author's Affiliation | Fac. Sci. & Eng., Meijo Univ. |
| 6th Author's Name | Motoaki Iwaya |
| 6th Author's Affiliation | Fac. Sci. & Eng., Meijo Univ. |
| 7th Author's Name | Tetuya Takeuchi |
| 7th Author's Affiliation | Fac. Sci. & Eng., Meijo Univ. |
| 8th Author's Name | Satoshi Kamiyama |
| 8th Author's Affiliation | Fac. Sci. & Eng., Meijo Univ. |
| 9th Author's Name | Isamu Akasaki |
| 9th Author's Affiliation | Fac. Sci. & Eng., Meijo Univ.:ARC, Nagoya Univ. |
| 10th Author's Name | Hiroshi Amano |
| 10th Author's Affiliation | Grad. Sch. of Eng., Nagoya Univ.:ARC, Nagoya Univ. |
| Date | 2011-05-19 |
| Paper # | ED2011-16,CPM2011-23,SDM2011-29 |
| Volume (vol) | vol.111 |
| Number (no) | 46 |
| Page | pp.pp.- |
| #Pages | 5 |
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