Presentation 2011-05-19
High thickness AlN growth with period trench patterned c-plane AlN on a-plane Sapphire by low-pressure HVPE
Yuta TAKAGI, Hideto MIYAKE, Kazumasa HIRAMATSU,
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Abstract(in English) The technique of period trench patterned AlN on Sapphire substrate is effective to obtain crack-free thick AlN film. The AlN was grown on period-trench pattern a-plane Sapphire by low-pressure HVPE. Epitaxial relationship between AlN and a-plane Sapphire was 90 degrees rotated for changing growth temperature and/or cleaning ambient. According to relationship of coalescing planes, two trench directions <0001>_ or <1-100>_ are considered. In this study, the influence of different trench pattern for AlN growth condition on a-plane Sapphire was discussed.
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Keyword(in English) AlN / a-plane Sapphire / HVPE / trench pattern
Paper # ED2011-2,CPM2011-9,SDM2011-15
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Committee SDM
Conference Date 2011/5/12(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High thickness AlN growth with period trench patterned c-plane AlN on a-plane Sapphire by low-pressure HVPE
Sub Title (in English)
Keyword(1) AlN
Keyword(2) a-plane Sapphire
Keyword(3) HVPE
Keyword(4) trench pattern
1st Author's Name Yuta TAKAGI
1st Author's Affiliation Faculty of Engineering, Mie University()
2nd Author's Name Hideto MIYAKE
2nd Author's Affiliation Faculty of Engineering, Mie University
3rd Author's Name Kazumasa HIRAMATSU
3rd Author's Affiliation Faculty of Engineering, Mie University
Date 2011-05-19
Paper # ED2011-2,CPM2011-9,SDM2011-15
Volume (vol) vol.111
Number (no) 46
Page pp.pp.-
#Pages 4
Date of Issue