Presentation | 2011-05-19 High thickness AlN growth with period trench patterned c-plane AlN on a-plane Sapphire by low-pressure HVPE Yuta TAKAGI, Hideto MIYAKE, Kazumasa HIRAMATSU, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The technique of period trench patterned AlN on Sapphire substrate is effective to obtain crack-free thick AlN film. The AlN was grown on period-trench pattern a-plane Sapphire by low-pressure HVPE. Epitaxial relationship between AlN and a-plane Sapphire was 90 degrees rotated for changing growth temperature and/or cleaning ambient. According to relationship of coalescing planes, two trench directions <0001>_ |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | AlN / a-plane Sapphire / HVPE / trench pattern |
Paper # | ED2011-2,CPM2011-9,SDM2011-15 |
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Conference Information | |
Committee | SDM |
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Conference Date | 2011/5/12(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | High thickness AlN growth with period trench patterned c-plane AlN on a-plane Sapphire by low-pressure HVPE |
Sub Title (in English) | |
Keyword(1) | AlN |
Keyword(2) | a-plane Sapphire |
Keyword(3) | HVPE |
Keyword(4) | trench pattern |
1st Author's Name | Yuta TAKAGI |
1st Author's Affiliation | Faculty of Engineering, Mie University() |
2nd Author's Name | Hideto MIYAKE |
2nd Author's Affiliation | Faculty of Engineering, Mie University |
3rd Author's Name | Kazumasa HIRAMATSU |
3rd Author's Affiliation | Faculty of Engineering, Mie University |
Date | 2011-05-19 |
Paper # | ED2011-2,CPM2011-9,SDM2011-15 |
Volume (vol) | vol.111 |
Number (no) | 46 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |