Presentation	2011-05-20 Fabrication of AlGaN/GaN MOSFETs with Al_2O_3 gate oxide deposited by atomic layer deposition Eiji Miyazaki, Takeshi Gouda, Shigeru Kishimoto, Takashi Mizutani,
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Abstract(in English)	We have introduced (NH_4)_2S surface treatments before the deposition of the Al_2O_3 gate oxide to improve the electrical properties of Al_2O_3/AlGaN/GaN MOSFETs. Firstly, the effect of (NH_4)_2S surface treatment was studied using Al_2O_3/GaN MOS diodes. The slope in the C-V curve of the MOS diodes with (NH_4)_2S surface treatments was steeper than that of the devices without (NH_4)_2S. In addition, Al_2O_3/GaN interface trap density was decreased by (NH_4)_2S surface treatments. The hysteresis of the Al_2O_3/AlGaN/GaN MOSFET with (NH_4)_2S surface treatments in I_D-V_ and g_m-V_ characteristics was smaller than that of the device without (NH_4)_2S surface treatments. In addition, the current saturation in I_D-V_ characteristics at a large gate voltage is relaxed. These results indicate that Al_2O_3/AlGaN interface trap density is decreased by (NH_4)_2S surface treatmens. The annealing of the MOS diodes was shown to be effective in improving the interface quality of the MOS diodes.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	Al_2O_3/AlGaN/GaN MOSFET / (NH_4)_2S / interface trap density
Paper #	ED2011-36,CPM2011-43,SDM2011-49
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Conference Information
Committee	ED
Conference Date	2011/5/12(1days)
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Paper Information
Registration To	Electron Devices (ED)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Fabrication of AlGaN/GaN MOSFETs with Al_2O_3 gate oxide deposited by atomic layer deposition
Sub Title (in English)
Keyword(1)	Al_2O_3/AlGaN/GaN MOSFET
Keyword(2)	(NH_4)_2S
Keyword(3)	interface trap density
1st Author's Name	Eiji Miyazaki
1st Author's Affiliation	Department of Quantum Engieering, Nagoya University()
2nd Author's Name	Takeshi Gouda
2nd Author's Affiliation	Department of Quantum Engieering, Nagoya University
3rd Author's Name	Shigeru Kishimoto
3rd Author's Affiliation	Department of Quantum Engieering, Nagoya University:VBL, Nagoya University
4th Author's Name	Takashi Mizutani
4th Author's Affiliation	VBL, Nagoya University
Date	2011-05-20
Paper #	ED2011-36,CPM2011-43,SDM2011-49
Volume (vol)	vol.111
Number (no)	44
Page	pp.pp.-
#Pages	6
Date of Issue