| Presentation | 2011-05-20 Study on AlInN barrier layer of GaInN channel HFET Kazuya IKEDA, Yasuhiro ISOBE, Hiromichi IKKI, Naofumi HORIO, Tatsuyuki SKAKIBARA, Motoaki IWAYA, Tetsuya TAKEUCHI, Satoshi KAMIYAMA, Isamu AKASAKI, Hiroshi AMANO, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaInN channel heterostructure field-effect transistors (HFETs) are promising for applications involving high operation current because they spontaneously produce high-density sheet carriers and strongly confine two-dimensional electron gases (2DEGs) owing to their large conduction band offset, and the large polarization charges. HFET using an AlInN barrier layer is also promising for a lattice-matched large-bandgap barrier structure. In addition, the MOVPE growth conditions for GaInN channel and AlInN barriers are similar. Thus, the combination of these materials is expected to achieve high-performance HFETs. In this study, we report on the electrical properties of AlInN/GaInN based heterostructures fabricated on a GaN template. We also fabricated and characterized AlInN/GaInN HFETs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlInN / GaInN / AlN / HFET |
| Paper # | ED2011-35,CPM2011-42,SDM2011-48 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2011/5/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study on AlInN barrier layer of GaInN channel HFET |
| Sub Title (in English) | |
| Keyword(1) | AlInN |
| Keyword(2) | GaInN |
| Keyword(3) | AlN |
| Keyword(4) | HFET |
| 1st Author's Name | Kazuya IKEDA |
| 1st Author's Affiliation | Fac. Sci. & Eng., Meijo University() |
| 2nd Author's Name | Yasuhiro ISOBE |
| 2nd Author's Affiliation | Fac. Sci. & Eng., Meijo University |
| 3rd Author's Name | Hiromichi IKKI |
| 3rd Author's Affiliation | Fac. Sci. & Eng., Meijo University |
| 4th Author's Name | Naofumi HORIO |
| 4th Author's Affiliation | Fac. Sci. & Eng., Meijo University |
| 5th Author's Name | Tatsuyuki SKAKIBARA |
| 5th Author's Affiliation | Fac. Sci. & Eng., Meijo University |
| 6th Author's Name | Motoaki IWAYA |
| 6th Author's Affiliation | Fac. Sci. & Eng., Meijo University |
| 7th Author's Name | Tetsuya TAKEUCHI |
| 7th Author's Affiliation | Fac. Sci. & Eng., Meijo University |
| 8th Author's Name | Satoshi KAMIYAMA |
| 8th Author's Affiliation | Fac. Sci. & Eng., Meijo University |
| 9th Author's Name | Isamu AKASAKI |
| 9th Author's Affiliation | Fac. Sci. & Eng., Meijo University:Akasaki Research Center, Nagoya University |
| 10th Author's Name | Hiroshi AMANO |
| 10th Author's Affiliation | Grad. Sch. of Eng., Nagoya University:Akasaki Research Center, Nagoya University |
| Date | 2011-05-20 |
| Paper # | ED2011-35,CPM2011-42,SDM2011-48 |
| Volume (vol) | vol.111 |
| Number (no) | 44 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |