Presentation | 2011-05-20 High electron mobility InSb film grown by surface reconstruction controlled epitaxy Masayuki MORI, Koji NAKAYAMA, Kimihiko NAKATANI, Yuichiro YASUI, Koichi MAEZAWA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have reported that high quality InSb films can be grown by surface reconstruction controlled epitaxy. In the growth, the growth of InSb film is carried out via InSb bilayer which is prepared by adsorption of In and Sb stoms onto a Si(111) surface. In this study, we optimized the growth condition such as growth temperature, growth rate and thickness of the first layer. We report the growth of high electron mobility InSb film with 36,200 cm2/Vs at RT on Si(111) substrate. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | InSb / Si(111) / Surface Reconstruction / bilayer |
Paper # | ED2011-19,CPM2011-26,SDM2011-32 |
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Conference Information | |
Committee | ED |
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Conference Date | 2011/5/12(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | High electron mobility InSb film grown by surface reconstruction controlled epitaxy |
Sub Title (in English) | |
Keyword(1) | InSb |
Keyword(2) | Si(111) |
Keyword(3) | Surface Reconstruction |
Keyword(4) | bilayer |
1st Author's Name | Masayuki MORI |
1st Author's Affiliation | Graduate school of Sci. & Eng. Toyama University() |
2nd Author's Name | Koji NAKAYAMA |
2nd Author's Affiliation | Graduate school of Sci. & Eng. Toyama University |
3rd Author's Name | Kimihiko NAKATANI |
3rd Author's Affiliation | Graduate school of Sci. & Eng. Toyama University |
4th Author's Name | Yuichiro YASUI |
4th Author's Affiliation | Graduate school of Sci. & Eng. Toyama University |
5th Author's Name | Koichi MAEZAWA |
5th Author's Affiliation | Graduate school of Sci. & Eng. Toyama University |
Date | 2011-05-20 |
Paper # | ED2011-19,CPM2011-26,SDM2011-32 |
Volume (vol) | vol.111 |
Number (no) | 44 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |