Presentation 2011-05-20
High electron mobility InSb film grown by surface reconstruction controlled epitaxy
Masayuki MORI, Koji NAKAYAMA, Kimihiko NAKATANI, Yuichiro YASUI, Koichi MAEZAWA,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have reported that high quality InSb films can be grown by surface reconstruction controlled epitaxy. In the growth, the growth of InSb film is carried out via InSb bilayer which is prepared by adsorption of In and Sb stoms onto a Si(111) surface. In this study, we optimized the growth condition such as growth temperature, growth rate and thickness of the first layer. We report the growth of high electron mobility InSb film with 36,200 cm2/Vs at RT on Si(111) substrate.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InSb / Si(111) / Surface Reconstruction / bilayer
Paper # ED2011-19,CPM2011-26,SDM2011-32
Date of Issue

Conference Information
Committee ED
Conference Date 2011/5/12(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High electron mobility InSb film grown by surface reconstruction controlled epitaxy
Sub Title (in English)
Keyword(1) InSb
Keyword(2) Si(111)
Keyword(3) Surface Reconstruction
Keyword(4) bilayer
1st Author's Name Masayuki MORI
1st Author's Affiliation Graduate school of Sci. & Eng. Toyama University()
2nd Author's Name Koji NAKAYAMA
2nd Author's Affiliation Graduate school of Sci. & Eng. Toyama University
3rd Author's Name Kimihiko NAKATANI
3rd Author's Affiliation Graduate school of Sci. & Eng. Toyama University
4th Author's Name Yuichiro YASUI
4th Author's Affiliation Graduate school of Sci. & Eng. Toyama University
5th Author's Name Koichi MAEZAWA
5th Author's Affiliation Graduate school of Sci. & Eng. Toyama University
Date 2011-05-20
Paper # ED2011-19,CPM2011-26,SDM2011-32
Volume (vol) vol.111
Number (no) 44
Page pp.pp.-
#Pages 4
Date of Issue