Presentation 2011-05-19
Antiphase domains in GaP grown on Si substrates using metalorganic vapor phase epitaxy
Yasushi TAKANO, Tatsuya TAKAGI, Tatsuru MISAKI, Ryo MIYAHARA,
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Abstract(in English) GaP layers were grown on 2° and 4° misoriented Si substrates using metalorganic vapor phase epitaxy. The misoriented substrates were used to suppress antiphase domains. Single domain GaP layers were obtained on 4° misoriented Si substrates. Antiphase domains self-annihilated during growth. A single domain GaP layer was achieved on the 2° misoriented Si substrates only at 800℃. Transmission electron microscopy revealed that the sublattice of the layer on the 2° misoriented substrate rotated 90° with respect to that on the 4° misoriented substrates.
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Keyword(in English) MOVPE / GaP / Si substrate / antiphase domain / atomic force microscopy / transmission electron microscopy
Paper # ED2011-15,CPM2011-22,SDM2011-28
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Committee CPM
Conference Date 2011/5/12(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Antiphase domains in GaP grown on Si substrates using metalorganic vapor phase epitaxy
Sub Title (in English)
Keyword(1) MOVPE
Keyword(2) GaP
Keyword(3) Si substrate
Keyword(4) antiphase domain
Keyword(5) atomic force microscopy
Keyword(6) transmission electron microscopy
1st Author's Name Yasushi TAKANO
1st Author's Affiliation Faculty of Engineering, Shizuoka University()
2nd Author's Name Tatsuya TAKAGI
2nd Author's Affiliation Faculty of Engineering, Shizuoka University
3rd Author's Name Tatsuru MISAKI
3rd Author's Affiliation Faculty of Engineering, Shizuoka University
4th Author's Name Ryo MIYAHARA
4th Author's Affiliation Faculty of Engineering, Shizuoka University
Date 2011-05-19
Paper # ED2011-15,CPM2011-22,SDM2011-28
Volume (vol) vol.111
Number (no) 45
Page pp.pp.-
#Pages 5
Date of Issue