| Presentation | 2011-05-19 MOCVD growth of GaN on graphite substrates Shinichi Kohda, Toshiyuki Takizawa, Nobuaki Nagao, Masahiro Ishida, Tetsuzo Ueda, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have successfully grown epitaxial GaN on graphite substrates by metal-organic chemical vapor deposition (MOCVD) with O_2 plasma treatment technique. The threading dislocation density of the obtained GaN layer is 2×10^9/cm^2, which is comparable to that of GaN on sapphire substrates. We have performed the first-principles calculation to investigate adsorption energies and adsorption sites for atomic species on graphite substrates. We found by the calculation that the adsorption energies on terrace edge sites of (0001) face are lower than those on terrace sites of (0001) face. These results suggest that the formation of terrace edge sites of (0001) face by the O_2 plasma treatment plays an important role to grow GaN on graphite substrates with good crystallinity. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / MOCVD / graphite / first-principles calculation |
| Paper # | ED2011-14,CPM2011-21,SDM2011-27 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2011/5/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | MOCVD growth of GaN on graphite substrates |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | MOCVD |
| Keyword(3) | graphite |
| Keyword(4) | first-principles calculation |
| 1st Author's Name | Shinichi Kohda |
| 1st Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation() |
| 2nd Author's Name | Toshiyuki Takizawa |
| 2nd Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation |
| 3rd Author's Name | Nobuaki Nagao |
| 3rd Author's Affiliation | Advanced Technology Research Laboratories, Panasonic Corporation |
| 4th Author's Name | Masahiro Ishida |
| 4th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation |
| 5th Author's Name | Tetsuzo Ueda |
| 5th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation |
| Date | 2011-05-19 |
| Paper # | ED2011-14,CPM2011-21,SDM2011-27 |
| Volume (vol) | vol.111 |
| Number (no) | 45 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |