| Presentation | 2011-05-20 Frequency Response of Polycrystalline Silicon Photoconductor Hideyuki OTOSAKA, Shingo EBUCHI, Takeo MARUYAMA, Koichi IIYAMA, Keisuke OHDAIRA, Hideki MATSUMURA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We fabricated a polycrystalline silicon (poly-Si) photoconductor and measured a sensitivity and frequency characteristics at a wavelength of 650 nm. Poly-Si layers are obtained by thermal annealing of amorphous silicon (a-Si). The a-Si is heated in a nitrogen atmosphere at 600℃, 100 min. The a-Si is deposited by the catalytic chemical vapor deposition (Cat-CVD). The electrodes are patterned by the photolithography and the liftoff process. The electrodes pattern is formed by comb structure, the receiving area of 50×50 μm^2 and the electrode width of 2 pm. The sensitivity of 36 mA/W and the maximum bandwidth of 30 MHz were obtained at the wavelength of 650 nm and the bias voltage of 30 V. The 0.2 μm thick of poly-Si film is obtained by dry etching method of 1.2 μm poly-Si. We measured the optical characteristics of 0.2 pm thick poly-Si photoconductor is also measured. The sensitivity of 0.8 mA/W and the maximum bandwidth of 200 MHz were obtained at the wavelength of 650 nm and the bias voltage of 30 V. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | photoconductor / amorphous silicon / thermal anneal / frequency response / Cat-CVD |
| Paper # | LQE2011-1 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2011/5/13(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Frequency Response of Polycrystalline Silicon Photoconductor |
| Sub Title (in English) | |
| Keyword(1) | photoconductor |
| Keyword(2) | amorphous silicon |
| Keyword(3) | thermal anneal |
| Keyword(4) | frequency response |
| Keyword(5) | Cat-CVD |
| 1st Author's Name | Hideyuki OTOSAKA |
| 1st Author's Affiliation | Graduate School of Natural Science and Technology, Kanazawa University() |
| 2nd Author's Name | Shingo EBUCHI |
| 2nd Author's Affiliation | Graduate School of Natural Science and Technology, Kanazawa University |
| 3rd Author's Name | Takeo MARUYAMA |
| 3rd Author's Affiliation | Graduate School of Natural Science and Technology, Kanazawa University |
| 4th Author's Name | Koichi IIYAMA |
| 4th Author's Affiliation | Graduate School of Natural Science and Technology, Kanazawa University |
| 5th Author's Name | Keisuke OHDAIRA |
| 5th Author's Affiliation | Materials Science, Japan Advanced Institute of Science and Technology School |
| 6th Author's Name | Hideki MATSUMURA |
| 6th Author's Affiliation | Materials Science, Japan Advanced Institute of Science and Technology School |
| Date | 2011-05-20 |
| Paper # | LQE2011-1 |
| Volume (vol) | vol.111 |
| Number (no) | 56 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |