Presentation 2011-05-13
Failure Analysis Method Using a Laser Excitation Quasi-electrostatic field Sensing Technique
Seigo ITO, Kiyoaki TAKIGUCHI,
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Abstract(in English) Electric fields exist in three forms - namely, radiation field, induction field and quasi-electrostatic field (QEF). The quasi-electrostatic field, on the other hand, is characterized by its existence only within the proximity of dielectrics and conductors close to the emission source, and advanced research has been promoted in recent years to utilize it for human body communication and personal authentication technologies. We noted this property of the quasi-electrostatic field, and by using the subtle change of the quasi-electrostatic field produced by the energy of laser beam irradiation onto a sample and a newly developed electric field assist electrode, we succeeded in detecting micro-sized metallic particles of a few to several tens of micrometers contained in an insulator. In this paper, we will elucidate the principle of quasi-electrostatic field detection, and discuss the mechanism of electric charge movement generated by laser beam irradiation onto silicon. We will then show a specific analysis example of the detection of micro-particles using the laser quasi-electrostatic field sensing technique, present the results, and finally state the future possibilities of this method.
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Keyword(in English) Laser beam / Quasi Electrostatic field / Non-bias / Non-contact / Probe sensor / Failure analysis
Paper # R2011-12
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Committee R
Conference Date 2011/5/6(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Failure Analysis Method Using a Laser Excitation Quasi-electrostatic field Sensing Technique
Sub Title (in English)
Keyword(1) Laser beam
Keyword(2) Quasi Electrostatic field
Keyword(3) Non-bias
Keyword(4) Non-contact
Keyword(5) Probe sensor
Keyword(6) Failure analysis
1st Author's Name Seigo ITO
1st Author's Affiliation The University of Tokyo, Institute of Industrial Science()
2nd Author's Name Kiyoaki TAKIGUCHI
2nd Author's Affiliation The University of Tokyo, Institute of Industrial Science
Date 2011-05-13
Paper # R2011-12
Volume (vol) vol.111
Number (no) 33
Page pp.pp.-
#Pages 6
Date of Issue