| Presentation | 2011-05-26 L-band Partially-impedance matched GaN FET with 360W Output Power and 65% Power Added Efficiency Koji YAMANAKA, Norihiro YUNOUE, Shin CHAKI, Masatoshi NAKAYAMA, Yoshihito HIRANO, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this paper, a high power and high efficiency partially-impedance matched GaN FET operating at L-band is presented. Recently, many over 100W output power GaN HEMT amplifiers have been developed. Especially, much attention is paid for Class-E GaN HEMT amplifiers, which will be used in mobile communication infrastructure systems. In general, class-E operation mode is used for such amplifiers for its simplicity. However there is a principle limitation of operation frequency or output power for class-E operation. In this paper a new class of amplifier is developed to overcome the limitation. By realizing intermediate operation mode between class-E and class-F, 360W output power and 65% power added efficiency was successfully obtained. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN HEMT / High-voltage techniques / MODFET power amplifiers |
| Paper # | EMCJ2011-17,MW2011-14,EST2011-10 |
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| Conference Information | |
| Committee | EMCJ |
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| Conference Date | 2011/5/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electromagnetic Compatibility (EMCJ) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | L-band Partially-impedance matched GaN FET with 360W Output Power and 65% Power Added Efficiency |
| Sub Title (in English) | |
| Keyword(1) | GaN HEMT |
| Keyword(2) | High-voltage techniques |
| Keyword(3) | MODFET power amplifiers |
| 1st Author's Name | Koji YAMANAKA |
| 1st Author's Affiliation | Mitsubishi Electric Corporation Information Technology R&D Center() |
| 2nd Author's Name | Norihiro YUNOUE |
| 2nd Author's Affiliation | Mitsubishi Electric Corporation Communication Systems Center |
| 3rd Author's Name | Shin CHAKI |
| 3rd Author's Affiliation | Mitsubishi Electric Corporation High Frequency & Optical Semiconductor Division |
| 4th Author's Name | Masatoshi NAKAYAMA |
| 4th Author's Affiliation | Mitsubishi Electric Corporation Information Technology R&D Center |
| 5th Author's Name | Yoshihito HIRANO |
| 5th Author's Affiliation | Mitsubishi Electric Corporation Information Technology R&D Center |
| Date | 2011-05-26 |
| Paper # | EMCJ2011-17,MW2011-14,EST2011-10 |
| Volume (vol) | vol.111 |
| Number (no) | 64 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |