Presentation 2011-02-24
Stochastic resonance using single electons
Katsuhiko NISHIGUCHI, Akira FUJIWARA,
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Abstract(in English) We demonstrate stochastic resonance (SR) with single electrons (SEs) using nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs). Input signal applied to a MOSFET modulates SE transport in an average manner based on non-linear characteristics. On the other hand, an individual SE goes through the MOSFET in a completely random manner, which corresponds to shot noise. SEs transferred to a storage node are counted precisely by the other MOSFET and used as an output signal. The correlation between the input and output signals is improved by taking advantage of extrinsic noise as well as the intrinsic shot noise composed of SEs. It is confirmed that the shot-noise-assisted SR allows fast operation with a simple system. Pattern perception utilizing SR is also demonstrated.
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Keyword(in English) stochastic resonance / single electron / Si MOSFET / shot noise
Paper # ED2010-205,SDM2010-240
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Conference Information
Committee SDM
Conference Date 2011/2/16(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Stochastic resonance using single electons
Sub Title (in English)
Keyword(1) stochastic resonance
Keyword(2) single electron
Keyword(3) Si MOSFET
Keyword(4) shot noise
1st Author's Name Katsuhiko NISHIGUCHI
1st Author's Affiliation NTT Basic Research Laboratories()
2nd Author's Name Akira FUJIWARA
2nd Author's Affiliation NTT Basic Research Laboratories
Date 2011-02-24
Paper # ED2010-205,SDM2010-240
Volume (vol) vol.110
Number (no) 424
Page pp.pp.-
#Pages 5
Date of Issue