Presentation | 2011-02-24 Stochastic resonance using single electons Katsuhiko NISHIGUCHI, Akira FUJIWARA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We demonstrate stochastic resonance (SR) with single electrons (SEs) using nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs). Input signal applied to a MOSFET modulates SE transport in an average manner based on non-linear characteristics. On the other hand, an individual SE goes through the MOSFET in a completely random manner, which corresponds to shot noise. SEs transferred to a storage node are counted precisely by the other MOSFET and used as an output signal. The correlation between the input and output signals is improved by taking advantage of extrinsic noise as well as the intrinsic shot noise composed of SEs. It is confirmed that the shot-noise-assisted SR allows fast operation with a simple system. Pattern perception utilizing SR is also demonstrated. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | stochastic resonance / single electron / Si MOSFET / shot noise |
Paper # | ED2010-205,SDM2010-240 |
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Conference Information | |
Committee | SDM |
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Conference Date | 2011/2/16(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Stochastic resonance using single electons |
Sub Title (in English) | |
Keyword(1) | stochastic resonance |
Keyword(2) | single electron |
Keyword(3) | Si MOSFET |
Keyword(4) | shot noise |
1st Author's Name | Katsuhiko NISHIGUCHI |
1st Author's Affiliation | NTT Basic Research Laboratories() |
2nd Author's Name | Akira FUJIWARA |
2nd Author's Affiliation | NTT Basic Research Laboratories |
Date | 2011-02-24 |
Paper # | ED2010-205,SDM2010-240 |
Volume (vol) | vol.110 |
Number (no) | 424 |
Page | pp.pp.- |
#Pages | 5 |
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