| Presentation | 2011-02-07 A highly reliable Cu interconnects with CuSiN and Ti-based barrier metal : Impact of oxygen surface treatment Yumi HAYASHI, Noriaki MATSUNAGA, Makoto WADA, Shinichi NAKAO, Kei WATANABE, Satoshi KATO, Atsuko SAKATA, Akihiro KAJITA, Hideki SHIBATA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A trade-off property of CuSiN between EM improvement and line resistance increase was resolved by a breakthrough that leaves oxygen at grain boundary of Cu line surface before CuSiN formation. Then, the combination of CuSiN and Ti-rich TiN (Ti(N)) barrier metal (-BM) was applied. Oxygen left by weakening process strength of CuO_x reduction lowered line resistance, because Si diffusion causing line resistance increase was controlled by the oxygen at grain boundary. Low-damage process of CuO_x reduction also improved voltage ramp dielectric breakdown (VRDB) property. Excellent EM performance brought about by CuSiN was kept by the combination with Ti(N)-BM, because the oxygen made Si and Ti distributions uniform at grain boundary of Cu surface by forming Ti-silicide. Cu atom transport that caused EM failure was suppressed throughout grain boundary of Cu surface. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | CuSiN / Ti-based barrier / Cu interconnect / Electromigration / oxygen / CuO_x reduction |
| Paper # | SDM2010-219 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2011/1/31(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A highly reliable Cu interconnects with CuSiN and Ti-based barrier metal : Impact of oxygen surface treatment |
| Sub Title (in English) | |
| Keyword(1) | CuSiN |
| Keyword(2) | Ti-based barrier |
| Keyword(3) | Cu interconnect |
| Keyword(4) | Electromigration |
| Keyword(5) | oxygen |
| Keyword(6) | CuO_x reduction |
| 1st Author's Name | Yumi HAYASHI |
| 1st Author's Affiliation | Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation() |
| 2nd Author's Name | Noriaki MATSUNAGA |
| 2nd Author's Affiliation | Semiconductor Company, Toshiba Corporation |
| 3rd Author's Name | Makoto WADA |
| 3rd Author's Affiliation | Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation |
| 4th Author's Name | Shinichi NAKAO |
| 4th Author's Affiliation | Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation |
| 5th Author's Name | Kei WATANABE |
| 5th Author's Affiliation | Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation |
| 6th Author's Name | Satoshi KATO |
| 6th Author's Affiliation | Semiconductor Company, Toshiba Corporation |
| 7th Author's Name | Atsuko SAKATA |
| 7th Author's Affiliation | Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation |
| 8th Author's Name | Akihiro KAJITA |
| 8th Author's Affiliation | Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation |
| 9th Author's Name | Hideki SHIBATA |
| 9th Author's Affiliation | Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation |
| Date | 2011-02-07 |
| Paper # | SDM2010-219 |
| Volume (vol) | vol.110 |
| Number (no) | 408 |
| Page | pp.pp.- |
| #Pages | 5 |
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