| Presentation | 2011-01-28 High-gain operation of avalanche photodiode with InP/InGaAs new structures Masahiro NADA, Yoshifumi MURAMOTO, Haruki YOKOYAMA, Naoteru SHIGEKAWA, Satoshi KODAMA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Due to higher voltage operation than that of conventional photodiodes (PDs), electrical field need to be confined inside the device for highly reliable avalanche photodiodes (APDs). To improve their reliability, several device structures with using selective diffusion or ion implantation techniques have been demonstrated. However, they make their fabrication processes complex. This paper describes a new structure of APD that highly confines electric field inside the device, which is fabricated by simpler processes. Fabricated APD has comparable characteristics to the conventional APDs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Avalanche photodiode / guard-ring free / mesa structure / high-gain operation |
| Paper # | PN2010-44,OPE2010-157,LQE2010-142 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2011/1/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High-gain operation of avalanche photodiode with InP/InGaAs new structures |
| Sub Title (in English) | |
| Keyword(1) | Avalanche photodiode |
| Keyword(2) | guard-ring free |
| Keyword(3) | mesa structure |
| Keyword(4) | high-gain operation |
| 1st Author's Name | Masahiro NADA |
| 1st Author's Affiliation | NTT Photonics Laboratories, NTT Corporation() |
| 2nd Author's Name | Yoshifumi MURAMOTO |
| 2nd Author's Affiliation | NTT Photonics Laboratories, NTT Corporation |
| 3rd Author's Name | Haruki YOKOYAMA |
| 3rd Author's Affiliation | NTT Photonics Laboratories, NTT Corporation |
| 4th Author's Name | Naoteru SHIGEKAWA |
| 4th Author's Affiliation | NTT Photonics Laboratories, NTT Corporation |
| 5th Author's Name | Satoshi KODAMA |
| 5th Author's Affiliation | NTT Photonics Laboratories, NTT Corporation |
| Date | 2011-01-28 |
| Paper # | PN2010-44,OPE2010-157,LQE2010-142 |
| Volume (vol) | vol.110 |
| Number (no) | 396 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |