| Presentation | 2011-01-28 1.3μm 25/40Gb/s EAM integrated DFB-LD Takeshi YAMATOYA, Takeshi SAITO, Yoshimichi MORITA, Eitaro ISHIMURA, Chikara WATATANI, Akihiro SHIMA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We developed 1.3μm 25/40Gb/s EMLs with tensile strained asymmetric QWs which showed superior response and modulation characteristic. Good characteristics of chip OMA (6.8dBm), extinction ratio (8.3dB) and ethernet mask margin (50%) were obtained at 25.8Gb/s. Also, clear eye-opening at 10km transmission was also achieved. In addition, excellent characteristics of chip power (5.0dBm), extinction ratio (9.2dB), SONET mask margin (13%) and 40km transmission penalty (-0.5dB) were obtained at 43.0Gb/s. From these results, our device is expected to be used in 100Gb/s ethernet and 40Gb/s-10/40km transmissions. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | EML / EA modulator / 25G / 40G / 100G ethernet / 1.3μm / tensile strained asymmetric QW |
| Paper # | PN2010-40,OPE2010-153,LQE2010-138 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2011/1/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 1.3μm 25/40Gb/s EAM integrated DFB-LD |
| Sub Title (in English) | |
| Keyword(1) | EML |
| Keyword(2) | EA modulator |
| Keyword(3) | 25G |
| Keyword(4) | 40G |
| Keyword(5) | 100G ethernet |
| Keyword(6) | 1.3μm |
| Keyword(7) | tensile strained asymmetric QW |
| 1st Author's Name | Takeshi YAMATOYA |
| 1st Author's Affiliation | High Frequency & Optical Device Works, Mitsubishi Electric Corporation() |
| 2nd Author's Name | Takeshi SAITO |
| 2nd Author's Affiliation | High Frequency & Optical Device Works, Mitsubishi Electric Corporation |
| 3rd Author's Name | Yoshimichi MORITA |
| 3rd Author's Affiliation | High Frequency & Optical Device Works, Mitsubishi Electric Corporation |
| 4th Author's Name | Eitaro ISHIMURA |
| 4th Author's Affiliation | High Frequency & Optical Device Works, Mitsubishi Electric Corporation |
| 5th Author's Name | Chikara WATATANI |
| 5th Author's Affiliation | High Frequency & Optical Device Works, Mitsubishi Electric Corporation |
| 6th Author's Name | Akihiro SHIMA |
| 6th Author's Affiliation | High Frequency & Optical Device Works, Mitsubishi Electric Corporation |
| Date | 2011-01-28 |
| Paper # | PN2010-40,OPE2010-153,LQE2010-138 |
| Volume (vol) | vol.110 |
| Number (no) | 396 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |