Presentation 2010-12-17
AlGaN semiconductor lasers for short ultraviolet region
Harumasa YOSHIDA, Masakazu KUWABARA, Yoji YAMASHITA, Kazuya UCHIYAMA, Hirofumi KAN,
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Abstract(in English) We have demonstrated the room-temperature operations of AlGaN based laser diodes under pulsed-current mode. AlGaN laser diodes have been fabricated on the low dislocation density AlGaN films. The laser diodes lased at a peak wavelength down to 336 nm far beyond the GaN band gap. The optical and temperature characteristics as well as the carrier recombination of the devices have been investigated. The results on the AlGaN based laser diodes grown on the high quality AlGaN films presented here will be essential for the future development of laser diodes emitting much shorter wavelength.
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Keyword(in English) GaN / AlGaN / ultraviolet / laser diodes / semiconductor lasers
Paper # LQE2010-128
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Committee LQE
Conference Date 2010/12/10(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) AlGaN semiconductor lasers for short ultraviolet region
Sub Title (in English)
Keyword(1) GaN
Keyword(2) AlGaN
Keyword(3) ultraviolet
Keyword(4) laser diodes
Keyword(5) semiconductor lasers
1st Author's Name Harumasa YOSHIDA
1st Author's Affiliation HAMAMATSU PHOTONICS K.K.()
2nd Author's Name Masakazu KUWABARA
2nd Author's Affiliation HAMAMATSU PHOTONICS K.K.
3rd Author's Name Yoji YAMASHITA
3rd Author's Affiliation HAMAMATSU PHOTONICS K.K.
4th Author's Name Kazuya UCHIYAMA
4th Author's Affiliation HAMAMATSU PHOTONICS K.K.
5th Author's Name Hirofumi KAN
5th Author's Affiliation HAMAMATSU PHOTONICS K.K.
Date 2010-12-17
Paper # LQE2010-128
Volume (vol) vol.110
Number (no) 353
Page pp.pp.-
#Pages 5
Date of Issue