| Presentation | 2010-12-17 High-power Blue-violet Laser Diodes with Window-structure Masao Kawaguchi, Hideki Kasugai, Katsuya Samonji, Hiroyuki Hagino, Kenji Orita, Kazuhiko Yamanaka, Masaaki Yuri, Shinichi Takigawa, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | High-power GaN-based laser diodes (LDs) are expected as light-source of various high-power applications. The catastrophic-optical-damage (COD) is a major failure mechanism to limit the output power, where optical absorption at a light-emitting facet causes an irreversible damage to the LDs. In this paper, a window structure in InGaN-based LDs to suppress the COD is demonstrated for the first time. The structure is formed by the MOCVD (metal organic chemical vapor deposition) growth over a recess placed besides of the ridge-waveguide. The In composition in the QW is reduced by controlling the local orientation angle at the sidewall of the recess. Thus formed window structure eliminates undesired optical absorption at the cleaved facet so that extremely high output power over 2W in narrow-stripe ridge-waveguide InGaN-based blue-violet LDs is achieved without any CODs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | High-power / GaN / laser diode / window structure |
| Paper # | LQE2010-127 |
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| Committee | LQE |
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| Conference Date | 2010/12/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High-power Blue-violet Laser Diodes with Window-structure |
| Sub Title (in English) | |
| Keyword(1) | High-power |
| Keyword(2) | GaN |
| Keyword(3) | laser diode |
| Keyword(4) | window structure |
| 1st Author's Name | Masao Kawaguchi |
| 1st Author's Affiliation | Semiconductor Devices Research Center, Semiconductor Company, Panasonic Corporation() |
| 2nd Author's Name | Hideki Kasugai |
| 2nd Author's Affiliation | Semiconductor Devices Research Center, Semiconductor Company, Panasonic Corporation |
| 3rd Author's Name | Katsuya Samonji |
| 3rd Author's Affiliation | Semiconductor Devices Research Center, Semiconductor Company, Panasonic Corporation |
| 4th Author's Name | Hiroyuki Hagino |
| 4th Author's Affiliation | Semiconductor Devices Research Center, Semiconductor Company, Panasonic Corporation |
| 5th Author's Name | Kenji Orita |
| 5th Author's Affiliation | Semiconductor Devices Research Center, Semiconductor Company, Panasonic Corporation |
| 6th Author's Name | Kazuhiko Yamanaka |
| 6th Author's Affiliation | Semiconductor Devices Research Center, Semiconductor Company, Panasonic Corporation |
| 7th Author's Name | Masaaki Yuri |
| 7th Author's Affiliation | Semiconductor Devices Research Center, Semiconductor Company, Panasonic Corporation |
| 8th Author's Name | Shinichi Takigawa |
| 8th Author's Affiliation | Semiconductor Devices Research Center, Semiconductor Company, Panasonic Corporation |
| Date | 2010-12-17 |
| Paper # | LQE2010-127 |
| Volume (vol) | vol.110 |
| Number (no) | 353 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |