Presentation 2010-12-17
Room-Temperature CW Operation of BeZnCdSe Green Laser Diode
Sumiko FUJISAKI, Hiroshi NAKAJIMA, Jun-ichi KASAI, Ryouichi AKIMOTO, Kunihiko TASAI, Yoshiro TAKIGUCHI, Takeshi KIKAWA, Tsunenori ASATSUMA, Koshi TAMAMURA, Sigehisa TANAKA, Shinji TSUJI, Haruhiko KUWATSUKA, Toshifumi HASAMA, Hiroshi ISHIKAWA,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Recently, green laser diodes have been received much attention because they enable novel devices such as micro-projectors or vivid color displays when used in combination with red and blue laser diodes. ZnSe based compound semiconductors are promising materials for the green LDs. In particular, Be containing ZnSe based mixed crystals are expected to overcome the problem of limited lifetime of II-VI-based LDs. In this study, room temperature continuous-wave (cw) operation at 545 nm was demonstrated with a BeZnCdSe quantum-well laser-diode. Its threshold current density was as low as 1.7kA/cm^2.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Green Laser Diode / II-VI semiconductor / Room Temperature CW operation / BeZnCdSe
Paper # LQE2010-126
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Conference Information
Committee LQE
Conference Date 2010/12/10(1days)
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Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Room-Temperature CW Operation of BeZnCdSe Green Laser Diode
Sub Title (in English)
Keyword(1) Green Laser Diode
Keyword(2) II-VI semiconductor
Keyword(3) Room Temperature CW operation
Keyword(4) BeZnCdSe
1st Author's Name Sumiko FUJISAKI
1st Author's Affiliation Central Research Laboratory, Hitachi, Ltd.()
2nd Author's Name Hiroshi NAKAJIMA
2nd Author's Affiliation Sony Corporation
3rd Author's Name Jun-ichi KASAI
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technologies
4th Author's Name Ryouichi AKIMOTO
4th Author's Affiliation National Institute of Advanced Industrial Science and Technologies
5th Author's Name Kunihiko TASAI
5th Author's Affiliation Sony Corporation
6th Author's Name Yoshiro TAKIGUCHI
6th Author's Affiliation Sony Corporation
7th Author's Name Takeshi KIKAWA
7th Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
8th Author's Name Tsunenori ASATSUMA
8th Author's Affiliation Sony Corporation
9th Author's Name Koshi TAMAMURA
9th Author's Affiliation Sony Corporation
10th Author's Name Sigehisa TANAKA
10th Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
11th Author's Name Shinji TSUJI
11th Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
12th Author's Name Haruhiko KUWATSUKA
12th Author's Affiliation National Institute of Advanced Industrial Science and Technologies
13th Author's Name Toshifumi HASAMA
13th Author's Affiliation National Institute of Advanced Industrial Science and Technologies
14th Author's Name Hiroshi ISHIKAWA
14th Author's Affiliation National Institute of Advanced Industrial Science and Technologies
Date 2010-12-17
Paper # LQE2010-126
Volume (vol) vol.110
Number (no) 353
Page pp.pp.-
#Pages 4
Date of Issue