Presentation | 2010-12-17 Room-Temperature CW Operation of BeZnCdSe Green Laser Diode Sumiko FUJISAKI, Hiroshi NAKAJIMA, Jun-ichi KASAI, Ryouichi AKIMOTO, Kunihiko TASAI, Yoshiro TAKIGUCHI, Takeshi KIKAWA, Tsunenori ASATSUMA, Koshi TAMAMURA, Sigehisa TANAKA, Shinji TSUJI, Haruhiko KUWATSUKA, Toshifumi HASAMA, Hiroshi ISHIKAWA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Recently, green laser diodes have been received much attention because they enable novel devices such as micro-projectors or vivid color displays when used in combination with red and blue laser diodes. ZnSe based compound semiconductors are promising materials for the green LDs. In particular, Be containing ZnSe based mixed crystals are expected to overcome the problem of limited lifetime of II-VI-based LDs. In this study, room temperature continuous-wave (cw) operation at 545 nm was demonstrated with a BeZnCdSe quantum-well laser-diode. Its threshold current density was as low as 1.7kA/cm^2. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Green Laser Diode / II-VI semiconductor / Room Temperature CW operation / BeZnCdSe |
Paper # | LQE2010-126 |
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Conference Information | |
Committee | LQE |
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Conference Date | 2010/12/10(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Room-Temperature CW Operation of BeZnCdSe Green Laser Diode |
Sub Title (in English) | |
Keyword(1) | Green Laser Diode |
Keyword(2) | II-VI semiconductor |
Keyword(3) | Room Temperature CW operation |
Keyword(4) | BeZnCdSe |
1st Author's Name | Sumiko FUJISAKI |
1st Author's Affiliation | Central Research Laboratory, Hitachi, Ltd.() |
2nd Author's Name | Hiroshi NAKAJIMA |
2nd Author's Affiliation | Sony Corporation |
3rd Author's Name | Jun-ichi KASAI |
3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technologies |
4th Author's Name | Ryouichi AKIMOTO |
4th Author's Affiliation | National Institute of Advanced Industrial Science and Technologies |
5th Author's Name | Kunihiko TASAI |
5th Author's Affiliation | Sony Corporation |
6th Author's Name | Yoshiro TAKIGUCHI |
6th Author's Affiliation | Sony Corporation |
7th Author's Name | Takeshi KIKAWA |
7th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
8th Author's Name | Tsunenori ASATSUMA |
8th Author's Affiliation | Sony Corporation |
9th Author's Name | Koshi TAMAMURA |
9th Author's Affiliation | Sony Corporation |
10th Author's Name | Sigehisa TANAKA |
10th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
11th Author's Name | Shinji TSUJI |
11th Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
12th Author's Name | Haruhiko KUWATSUKA |
12th Author's Affiliation | National Institute of Advanced Industrial Science and Technologies |
13th Author's Name | Toshifumi HASAMA |
13th Author's Affiliation | National Institute of Advanced Industrial Science and Technologies |
14th Author's Name | Hiroshi ISHIKAWA |
14th Author's Affiliation | National Institute of Advanced Industrial Science and Technologies |
Date | 2010-12-17 |
Paper # | LQE2010-126 |
Volume (vol) | vol.110 |
Number (no) | 353 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |