| Presentation | 2010-12-17 High power 625-nm AlGaInP laser diode Tetsuya YAGI, Naoyuki SHIMADA, Akihito OHNO, Shinji ABE, Motoharu MIYASHITA, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | High power AlGaInP laser diode is used for red light source of laser display, that has features as wide color expression range, low power consumption and so on. Shorter lasing wavelength in red color region enables low output power operation for the same brightness. In this report, the possibility of shortening lasing wavelength in AlGaInP LD is discussed. 624.9nm lasing at 25C, 50 mW, CW with broad area structure LD with 40 um width was confirmed. Threshold current density of 630A/cm^2, the smallest record, and maximum power of 220 mW at 25C, CW was realized. But the LD shows worse temperature characteristics as To of 25.2K compared to 630 nm-LD, thus it is concluded that further improvements is necessitated for display applications. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Laser Display / AlGaInP / Laser Diode / short wavelength |
| Paper # | LQE2010-125 |
| Date of Issue |
| Conference Information | |
| Committee | LQE |
|---|---|
| Conference Date | 2010/12/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High power 625-nm AlGaInP laser diode |
| Sub Title (in English) | |
| Keyword(1) | Laser Display |
| Keyword(2) | AlGaInP |
| Keyword(3) | Laser Diode |
| Keyword(4) | short wavelength |
| 1st Author's Name | Tetsuya YAGI |
| 1st Author's Affiliation | High Freq. & Optical Device Works, Mitsubishi Electric() |
| 2nd Author's Name | Naoyuki SHIMADA |
| 2nd Author's Affiliation | High Freq. & Optical Device Works, Mitsubishi Electric |
| 3rd Author's Name | Akihito OHNO |
| 3rd Author's Affiliation | High Freq. & Optical Device Works, Mitsubishi Electric |
| 4th Author's Name | Shinji ABE |
| 4th Author's Affiliation | High Freq. & Optical Device Works, Mitsubishi Electric |
| 5th Author's Name | Motoharu MIYASHITA |
| 5th Author's Affiliation | High Freq. & Optical Device Works, Mitsubishi Electric |
| Date | 2010-12-17 |
| Paper # | LQE2010-125 |
| Volume (vol) | vol.110 |
| Number (no) | 353 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |