| Presentation | 2010-12-17 Lasing in GaAs_<1-x>Bi_x/GaAs thin film cavity by photo-pumping and its low-temperature-dependent oscillation wavelength Yoriko TOMINAGA, Kunishige OE, Masahiro YOSHIMOTO, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Lasing oscillation from a GaAs_<1-x>Bi_x/GaAs thin film with a Fabry-Perot cavity is achieved by photo-pumping. The GaAS_<0.975>Bi_<0.025> active layer was grown at as low as 350℃ by molecular beam epitaxy. The characteristic temperature of the laser was 83 K between 160 and 240 K. In this temperature range, temperature coefficient of the lasing emission peak energy was -0.18 meV/K, which is 40% of the value for the band gap of GaAs. Above 240 K, the lasing threshold pumping power increased sharply, and the lasing emission peak energy started shifting to a higher energy. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Bismide III-V semiconductor-semimetal alloy / Molecular beam epitaxy / Fabry-Perot laser |
| Paper # | LQE2010-124 |
| Date of Issue |
| Conference Information | |
| Committee | LQE |
|---|---|
| Conference Date | 2010/12/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Lasing in GaAs_<1-x>Bi_x/GaAs thin film cavity by photo-pumping and its low-temperature-dependent oscillation wavelength |
| Sub Title (in English) | |
| Keyword(1) | Bismide III-V semiconductor-semimetal alloy |
| Keyword(2) | Molecular beam epitaxy |
| Keyword(3) | Fabry-Perot laser |
| 1st Author's Name | Yoriko TOMINAGA |
| 1st Author's Affiliation | Department of Electronics, Kyoto Institute of Technology() |
| 2nd Author's Name | Kunishige OE |
| 2nd Author's Affiliation | Department of Electronics, Kyoto Institute of Technology |
| 3rd Author's Name | Masahiro YOSHIMOTO |
| 3rd Author's Affiliation | Department of Electronics, Kyoto Institute of Technology |
| Date | 2010-12-17 |
| Paper # | LQE2010-124 |
| Volume (vol) | vol.110 |
| Number (no) | 353 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |