| Presentation | 2010-12-17 Growth of Large InGaAs Single Crystals as Substrates of 1.3 Micron Wavelength Laser Diodes Kyoichi KINOSHITA, Shinichi YODA, Hirokatsu AOKI, Satoshi YAMAMOTO, Tadatoshi HOSOKAWA, Masaaki MATSUSHIMA, Masakazu ARAI, Yoshihiro KAWAGUCHI, Fumiyoshi KANO, Yasuhiro KONDO, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have succeeded in growing homogeneous In_xGa_<1-x>As (x:0.10-0.13) platy single crystals by the traveling liquidus-zone (TLZ) method as substrates of laser diodes for the first time. Key points in the TLZ method are to suppress convection in a melt and to keep constant temperature gradient for obtaining homogeneous crystals. Single crystals with surface area larger than 50×50mm^2 were grown. Fabricated laser diodes on these substrates showed high temperature stability and error free transmission and showed the merit of ternary substrates. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InGaAs / substrate / TLZ method / 1.3μm wavelength laser diode |
| Paper # | LQE2010-123 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2010/12/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth of Large InGaAs Single Crystals as Substrates of 1.3 Micron Wavelength Laser Diodes |
| Sub Title (in English) | |
| Keyword(1) | InGaAs |
| Keyword(2) | substrate |
| Keyword(3) | TLZ method |
| Keyword(4) | 1.3μm wavelength laser diode |
| 1st Author's Name | Kyoichi KINOSHITA |
| 1st Author's Affiliation | Japan Aerospace Exploration Agency() |
| 2nd Author's Name | Shinichi YODA |
| 2nd Author's Affiliation | Japan Aerospace Exploration Agency |
| 3rd Author's Name | Hirokatsu AOKI |
| 3rd Author's Affiliation | Furuuchi Chemical Co. Ltd. |
| 4th Author's Name | Satoshi YAMAMOTO |
| 4th Author's Affiliation | Furuuchi Chemical Co. Ltd. |
| 5th Author's Name | Tadatoshi HOSOKAWA |
| 5th Author's Affiliation | Furuuchi Chemical Co. Ltd. |
| 6th Author's Name | Masaaki MATSUSHIMA |
| 6th Author's Affiliation | Furuuchi Chemical Co. Ltd. |
| 7th Author's Name | Masakazu ARAI |
| 7th Author's Affiliation | Nippon Telegraph and Telephone East Corporation |
| 8th Author's Name | Yoshihiro KAWAGUCHI |
| 8th Author's Affiliation | NTT Electronics Corporation |
| 9th Author's Name | Fumiyoshi KANO |
| 9th Author's Affiliation | NTT Photonics Laboratories |
| 10th Author's Name | Yasuhiro KONDO |
| 10th Author's Affiliation | NTT Electronics Corporation |
| Date | 2010-12-17 |
| Paper # | LQE2010-123 |
| Volume (vol) | vol.110 |
| Number (no) | 353 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |