Presentation 2010-12-17
Lateral Current Injection 1550nm Wavelength DFB Laser with a-Si Surface Grating
Takahiko SHINDO, Tadashi OKUMURA, Hitomi ITO, Takayuki KOGUCHI, Daisuke TAKAHASHI, Yuki ATSUMI, Joonhyun KANG, Ryo OSABE, Tomohiro AMEMIYA, Nobuhiko NISHIYAMA, Shigehisa ARAI,
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Abstract(in English) The performance of LSI will hit performance ceiling by global wiring data capacity with technological progress like a signal delay or thermal problem. One of the promising candidates to solve this problem is replacing the electrical global wiring on chip by an optical interconnection. A semiconductor membrane laser, which consists of a high-ondex contrast waveguide, is expected to operate with ultra low threshold current due to an enhanced modal gain. We have introduced a lateral current injection (LCI) structure for electrical pumped membrane laser. In this paper, we tried to demonstrate LCI type DFB laser with surface grating structure. At first, we fabricated the LCI-DFB laser with etched GaInAsP surface grating, and realized the first single mode operation of LCI-DFB laser under Furthermore, we introduced a-Si surface grating structure in LCI laser and improved lasing characteristics. A low threshold current of 7.0 mA, and high differential quantum efficiency from a front facet of 43% were obtained under a room-temperature continuous-wave condition.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Semiconductor membrane laser / Lateral current injection / Strong optical confinement / Surface grating
Paper # LQE2010-118
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Committee LQE
Conference Date 2010/12/10(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Lateral Current Injection 1550nm Wavelength DFB Laser with a-Si Surface Grating
Sub Title (in English)
Keyword(1) Semiconductor membrane laser
Keyword(2) Lateral current injection
Keyword(3) Strong optical confinement
Keyword(4) Surface grating
1st Author's Name Takahiko SHINDO
1st Author's Affiliation Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology()
2nd Author's Name Tadashi OKUMURA
2nd Author's Affiliation Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology
3rd Author's Name Hitomi ITO
3rd Author's Affiliation Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology
4th Author's Name Takayuki KOGUCHI
4th Author's Affiliation Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology
5th Author's Name Daisuke TAKAHASHI
5th Author's Affiliation Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology
6th Author's Name Yuki ATSUMI
6th Author's Affiliation Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology
7th Author's Name Joonhyun KANG
7th Author's Affiliation Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology
8th Author's Name Ryo OSABE
8th Author's Affiliation Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology
9th Author's Name Tomohiro AMEMIYA
9th Author's Affiliation Quantum Nanoelectronics Research Center, Tokyo Institute of Technology
10th Author's Name Nobuhiko NISHIYAMA
10th Author's Affiliation Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology
11th Author's Name Shigehisa ARAI
11th Author's Affiliation Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology:Quantum Nanoelectronics Research Center, Tokyo Institute of Technology
Date 2010-12-17
Paper # LQE2010-118
Volume (vol) vol.110
Number (no) 353
Page pp.pp.-
#Pages 6
Date of Issue