Presentation | 2010-12-17 Lateral Current Injection 1550nm Wavelength DFB Laser with a-Si Surface Grating Takahiko SHINDO, Tadashi OKUMURA, Hitomi ITO, Takayuki KOGUCHI, Daisuke TAKAHASHI, Yuki ATSUMI, Joonhyun KANG, Ryo OSABE, Tomohiro AMEMIYA, Nobuhiko NISHIYAMA, Shigehisa ARAI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The performance of LSI will hit performance ceiling by global wiring data capacity with technological progress like a signal delay or thermal problem. One of the promising candidates to solve this problem is replacing the electrical global wiring on chip by an optical interconnection. A semiconductor membrane laser, which consists of a high-ondex contrast waveguide, is expected to operate with ultra low threshold current due to an enhanced modal gain. We have introduced a lateral current injection (LCI) structure for electrical pumped membrane laser. In this paper, we tried to demonstrate LCI type DFB laser with surface grating structure. At first, we fabricated the LCI-DFB laser with etched GaInAsP surface grating, and realized the first single mode operation of LCI-DFB laser under Furthermore, we introduced a-Si surface grating structure in LCI laser and improved lasing characteristics. A low threshold current of 7.0 mA, and high differential quantum efficiency from a front facet of 43% were obtained under a room-temperature continuous-wave condition. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Semiconductor membrane laser / Lateral current injection / Strong optical confinement / Surface grating |
Paper # | LQE2010-118 |
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Conference Information | |
Committee | LQE |
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Conference Date | 2010/12/10(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Lateral Current Injection 1550nm Wavelength DFB Laser with a-Si Surface Grating |
Sub Title (in English) | |
Keyword(1) | Semiconductor membrane laser |
Keyword(2) | Lateral current injection |
Keyword(3) | Strong optical confinement |
Keyword(4) | Surface grating |
1st Author's Name | Takahiko SHINDO |
1st Author's Affiliation | Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology() |
2nd Author's Name | Tadashi OKUMURA |
2nd Author's Affiliation | Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology |
3rd Author's Name | Hitomi ITO |
3rd Author's Affiliation | Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology |
4th Author's Name | Takayuki KOGUCHI |
4th Author's Affiliation | Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology |
5th Author's Name | Daisuke TAKAHASHI |
5th Author's Affiliation | Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology |
6th Author's Name | Yuki ATSUMI |
6th Author's Affiliation | Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology |
7th Author's Name | Joonhyun KANG |
7th Author's Affiliation | Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology |
8th Author's Name | Ryo OSABE |
8th Author's Affiliation | Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology |
9th Author's Name | Tomohiro AMEMIYA |
9th Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology |
10th Author's Name | Nobuhiko NISHIYAMA |
10th Author's Affiliation | Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology |
11th Author's Name | Shigehisa ARAI |
11th Author's Affiliation | Dept. of Electrical and Electronic Engineering, Tokyo Institute of Technology:Quantum Nanoelectronics Research Center, Tokyo Institute of Technology |
Date | 2010-12-17 |
Paper # | LQE2010-118 |
Volume (vol) | vol.110 |
Number (no) | 353 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |