| Presentation | 2010-12-17 Wavelength Tunability of Highly Stacked Quantum Dot Laser Fabricated by a Strain Compensation Technique Kouichi AKAHANE, Naokatsu YAMAMOTO, Tetsuya KAWANISHI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have fabricated a highly stacked InAs QD structure and incorporated it into a QD laser. We used a strain compensation technique to fabricate a uniform and ordered QD structure, without degrading crystal quality, with a density of more than 10<12>/cm^2. Our QD laser consisted of highly stacked InAs QD layers grown on a InP(311)B substrate. Ground-state lasing of between 1.47 and 1.7μm from highly-stacked InAs QD layers grown on an InP(311)B substrate was achieved with our QD laser. The achievement of ground-state lasing is attributable to the increase in QD density, which is a result of using the strain-compensation technique. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Quantum dot / Semiconductor laser / Strain compensation / Multistack |
| Paper # | LQE2010-117 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2010/12/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Wavelength Tunability of Highly Stacked Quantum Dot Laser Fabricated by a Strain Compensation Technique |
| Sub Title (in English) | |
| Keyword(1) | Quantum dot |
| Keyword(2) | Semiconductor laser |
| Keyword(3) | Strain compensation |
| Keyword(4) | Multistack |
| 1st Author's Name | Kouichi AKAHANE |
| 1st Author's Affiliation | National Institute of Information and Communications Technology() |
| 2nd Author's Name | Naokatsu YAMAMOTO |
| 2nd Author's Affiliation | National Institute of Information and Communications Technology |
| 3rd Author's Name | Tetsuya KAWANISHI |
| 3rd Author's Affiliation | National Institute of Information and Communications Technology |
| Date | 2010-12-17 |
| Paper # | LQE2010-117 |
| Volume (vol) | vol.110 |
| Number (no) | 353 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |