Presentation 2011-01-28
A transimpedance amplifier for 10G-EPON OLT : Swich circuit using HBT transistor for burst mode TIA
Hiroshi HARA, Sosaku SAWADA,
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Abstract(in English) We report a newly developed dual rate burst mode transimpedance amplifier (TIA), which is key device for 10G-EPON OLT. The automatic gain control (AGC) of TIA is used average detection type. For receiving the burst mode, we developed the switch circuit using transistor in order to change the time constant of the average detection of AGC during preamble signal. TIA IC is fabricated with InP HBT process technology. We evaluated an assembled optical receiver with APD and TIA. As a result, 10.3G and 1.25G receiver sensitivity of -29.9dBm and -33.0dBm are achieved, respectively.
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Keyword(in English) IEEE802.3av / 10G-EPON / OLT / burst mode / dual rate
Paper # OCS2010-111
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Committee OCS
Conference Date 2011/1/20(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) A transimpedance amplifier for 10G-EPON OLT : Swich circuit using HBT transistor for burst mode TIA
Sub Title (in English)
Keyword(1) IEEE802.3av
Keyword(2) 10G-EPON
Keyword(3) OLT
Keyword(4) burst mode
Keyword(5) dual rate
1st Author's Name Hiroshi HARA
1st Author's Affiliation Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd.()
2nd Author's Name Sosaku SAWADA
2nd Author's Affiliation Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd.
Date 2011-01-28
Paper # OCS2010-111
Volume (vol) vol.110
Number (no) 392
Page pp.pp.-
#Pages 4
Date of Issue