Presentation | 2011-01-28 A transimpedance amplifier for 10G-EPON OLT : Swich circuit using HBT transistor for burst mode TIA Hiroshi HARA, Sosaku SAWADA, |
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Abstract(in English) | We report a newly developed dual rate burst mode transimpedance amplifier (TIA), which is key device for 10G-EPON OLT. The automatic gain control (AGC) of TIA is used average detection type. For receiving the burst mode, we developed the switch circuit using transistor in order to change the time constant of the average detection of AGC during preamble signal. TIA IC is fabricated with InP HBT process technology. We evaluated an assembled optical receiver with APD and TIA. As a result, 10.3G and 1.25G receiver sensitivity of -29.9dBm and -33.0dBm are achieved, respectively. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | IEEE802.3av / 10G-EPON / OLT / burst mode / dual rate |
Paper # | OCS2010-111 |
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Committee | OCS |
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Conference Date | 2011/1/20(1days) |
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Registration To | Optical Communication Systems (OCS) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | A transimpedance amplifier for 10G-EPON OLT : Swich circuit using HBT transistor for burst mode TIA |
Sub Title (in English) | |
Keyword(1) | IEEE802.3av |
Keyword(2) | 10G-EPON |
Keyword(3) | OLT |
Keyword(4) | burst mode |
Keyword(5) | dual rate |
1st Author's Name | Hiroshi HARA |
1st Author's Affiliation | Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd.() |
2nd Author's Name | Sosaku SAWADA |
2nd Author's Affiliation | Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd. |
Date | 2011-01-28 |
Paper # | OCS2010-111 |
Volume (vol) | vol.110 |
Number (no) | 392 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |