| Presentation | 2011-01-29 Deposition of Insulator Film with New Facing Electrodes CVD for Low Temperature Devices Tokiyoshi Matsuda, Mamoru Furuta, Takahiro Hiramatsu, Hiroshi Furuta, Takashi Hirao, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Insulating SiO_x film was deposited at low temperature with newly developed plasma source for low heat resistive substrate as for flexible display. The plasma was induced with electromagnetic field generated by two facing electrodes including magnets inside and covered with SiO_2 targets. The higher deposition rate was realized with the mixture of tetramethylsilane and oxygen as source gases. The insulating properties were obtained as 3×10^<-8> A/cm^2 at an electric field of 1 MV/cm, and a breakdown voltage of 5 MV/cm at 1×10^<-6> A/cm^2 for the film deposition rate at 11 nm/min. High density plasma enhanced by magnetic field would be the hopeful solution for deposition of high deposition rate gate insulator at low temperature. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | thin film transistor / gate insulator / chemical vapor deposition (CVD) / FT-IR |
| Paper # | EID2010-35 |
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| Conference Information | |
| Committee | EID |
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| Conference Date | 2011/1/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electronic Information Displays (EID) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Deposition of Insulator Film with New Facing Electrodes CVD for Low Temperature Devices |
| Sub Title (in English) | |
| Keyword(1) | thin film transistor |
| Keyword(2) | gate insulator |
| Keyword(3) | chemical vapor deposition (CVD) |
| Keyword(4) | FT-IR |
| 1st Author's Name | Tokiyoshi Matsuda |
| 1st Author's Affiliation | Research Institute for Nanodevices Kochi University of Technology() |
| 2nd Author's Name | Mamoru Furuta |
| 2nd Author's Affiliation | Research Institute for Nanodevices Kochi University of Technology |
| 3rd Author's Name | Takahiro Hiramatsu |
| 3rd Author's Affiliation | Research Institute for Nanodevices Kochi University of Technology |
| 4th Author's Name | Hiroshi Furuta |
| 4th Author's Affiliation | Research Institute for Nanodevices Kochi University of Technology |
| 5th Author's Name | Takashi Hirao |
| 5th Author's Affiliation | Research Institute for Nanodevices Kochi University of Technology |
| Date | 2011-01-29 |
| Paper # | EID2010-35 |
| Volume (vol) | vol.110 |
| Number (no) | 404 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |