| Presentation | 2011-01-28 Preparation of rare earth doped SrGa_2S_4 thin film phosphors by 355 nm laser annealing Takahisa YAMASAKI, Toshiaki SEINO, Hiroko KOMINAMI, Yoichiro NAKANISHI, Yoshinori HATANAKA, Kazuhiko HARA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | It is researched that low temperature preparing process of thin film phosphors by laser annealing. Using phosphor is SrGa_2S_4:Eu^<2+>. Preparing process is that Ga_2S_3:Eu(1 mol%) and SrS:Eu(2 mol%) pellets were evaporated by two electron beams, and deposited on substrates. After deposition, pre-annealing at 500℃ is carried out, thenNd:YAG(355 nm) laser is irradiated. In this study, to consider the preparation mechanism of SrGa_2S_4:Eu^<2+> by 355 nm laser annealing, spectral transmittance of SrS:Eu and Ga_2S_3:Eu thin films were measured, and simulation of thermal distribution was carried out. At 355 nm, transmittance of SrS is higher than Ga_2S_3, and according to simulation result, it was guessed that Ga_2S_3 absorbed laser energy mainly and heated. SrGa_2S_4:Eu^<2+> thin films were prepared by 355 nm laser at 10 Hz change from 8 kHz, to know the relationship between laser frequency and influence to preparation of thin film by laser annealing. On 10 Hz laser annealed samples have very few luminance, and it was found that these are almost amorphous by XRD result. It is guessed that laser of low frequency can not obtain heatings on each pulse, due to wide pulse length. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SrGa_2S_4 / Thin film phosphors / Laser annealing / Spectral transmittance / Frequency |
| Paper # | EID2010-24 |
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| Committee | EID |
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| Conference Date | 2011/1/21(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Electronic Information Displays (EID) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Preparation of rare earth doped SrGa_2S_4 thin film phosphors by 355 nm laser annealing |
| Sub Title (in English) | |
| Keyword(1) | SrGa_2S_4 |
| Keyword(2) | Thin film phosphors |
| Keyword(3) | Laser annealing |
| Keyword(4) | Spectral transmittance |
| Keyword(5) | Frequency |
| 1st Author's Name | Takahisa YAMASAKI |
| 1st Author's Affiliation | Research Institute of Electronics, Shizuoka University() |
| 2nd Author's Name | Toshiaki SEINO |
| 2nd Author's Affiliation | Japan Steel Works |
| 3rd Author's Name | Hiroko KOMINAMI |
| 3rd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 4th Author's Name | Yoichiro NAKANISHI |
| 4th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 5th Author's Name | Yoshinori HATANAKA |
| 5th Author's Affiliation | Department of Electronics and Information Engineering, Aichi University of Technology |
| 6th Author's Name | Kazuhiko HARA |
| 6th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| Date | 2011-01-28 |
| Paper # | EID2010-24 |
| Volume (vol) | vol.110 |
| Number (no) | 404 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |