| Presentation | 2010-12-17 Variability in Scaled MOS Devices Kiyoshi TAKEUCHI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this presentation, various kinds of variability in MOS devices will be classified and reviewed. Then, among all these, "random fluctuation" will be discussed in detail, which is a kind of variability that exhibits no spatial correlation, and is rapidly increasing as FETs are scaled down. Current understanding of its root causes, and possible counter measures will be discussed. Finally, random telegraph noise (RTN), which is emerging as a new reliability concern, will be briefly covered. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Variability / Random Fluctuation / MOSFET |
| Paper # | ICD2010-121 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 2010/12/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Variability in Scaled MOS Devices |
| Sub Title (in English) | |
| Keyword(1) | Variability |
| Keyword(2) | Random Fluctuation |
| Keyword(3) | MOSFET |
| 1st Author's Name | Kiyoshi TAKEUCHI |
| 1st Author's Affiliation | Renesas Electronics Corp.:MIRAI-Selete() |
| Date | 2010-12-17 |
| Paper # | ICD2010-121 |
| Volume (vol) | vol.110 |
| Number (no) | 344 |
| Page | pp.pp.- |
| #Pages | 3 |
| Date of Issue | |