Presentation 2010-12-16
A 65nm CMOS High-Speed and High-Fidelity NBTI Recovery Sensor
Takashi MATSUMOTO, Hiroaki MAKINO, Kazutoshi KOBAYASHI, Hidetoshi ONODERA,
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Abstract(in English) We proposed an NBTI-recovery sensor with 400ns measurement delay. This sensor contains many unit cells. One unit cell includes ten PMOS DUTs and two assist NMOSes. Parallelizing many unit cells can amplify the leakage current and the assist circuit can reduce the rush current to the ammeter that keeps the measurement range of ammeter constant during measurement. Fast measurement delay is achieved by these two factors. It is confirmed that from 50℃ to 125℃, NBTI recovery follows log t from 400ns to 3000s. By degrading and recovering thousands of PMOS transistors at the same time, we can observe that the time constants of positively charged defects which are related to NBTI are log-uniformly distributed in the PMOS devices. Also this circuit has the highest fidelity to NBTI recovery measurement because off-leak current is used for NBTI recovery characterization and stress is not added during measurement.
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Keyword(in English) dependable VLSI / CMOS / NBTI
Paper # ICD2010-104
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Committee ICD
Conference Date 2010/12/9(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A 65nm CMOS High-Speed and High-Fidelity NBTI Recovery Sensor
Sub Title (in English)
Keyword(1) dependable VLSI
Keyword(2) CMOS
Keyword(3) NBTI
1st Author's Name Takashi MATSUMOTO
1st Author's Affiliation Graduate School of Informatics, Kyoto University()
2nd Author's Name Hiroaki MAKINO
2nd Author's Affiliation Graduate School of Informatics, Kyoto University
3rd Author's Name Kazutoshi KOBAYASHI
3rd Author's Affiliation Graduate School of Science and Technology, Kyoto Institute of Technology:JST CREST
4th Author's Name Hidetoshi ONODERA
4th Author's Affiliation Graduate School of Informatics, Kyoto University:JST CREST
Date 2010-12-16
Paper # ICD2010-104
Volume (vol) vol.110
Number (no) 344
Page pp.pp.-
#Pages 4
Date of Issue