Presentation 2010-12-17
Frequency response of amorphous silicon photoconductor
Hideyuki OTOSAKA, Takeshi KAWAHARA, Takeo MARUYAMA, Koichi IIYAMA, Keisuke OHDAIRA, Hideki MATHUMURA,
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Abstract(in English) We fabricated an amorphous silicon (a-Si) photoconductor and measured a sensitivity and frequency characteristics at a wavelength of 650nm. a-Si layers are deposited by the catalytic chemical vapor deposition (Cat-CVD). The electrodes are patterned by the photolithography and the liftoff process. The electrodes pattern is formed by comb structure, the receiving area of 50μm×50μm and the electrode width of 1μm. The sensitivity of 4.6mA/W and the maximum bandwidth of 18MHz were obtained at the wavelength of 650 nm and the bias voltage of 50V.
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Keyword(in English) photoconductor / amorphous silicon / frequency response / Cat-CVD
Paper # OPE2010-135
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Committee OPE
Conference Date 2010/12/10(1days)
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Registration To Optoelectronics (OPE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Frequency response of amorphous silicon photoconductor
Sub Title (in English)
Keyword(1) photoconductor
Keyword(2) amorphous silicon
Keyword(3) frequency response
Keyword(4) Cat-CVD
1st Author's Name Hideyuki OTOSAKA
1st Author's Affiliation Kanazawa Univ. Graduate School of Natural Science & Technology()
2nd Author's Name Takeshi KAWAHARA
2nd Author's Affiliation Kanazawa Univ. Graduate School of Natural Science & Technology
3rd Author's Name Takeo MARUYAMA
3rd Author's Affiliation Kanazawa Univ. Graduate School of Natural Science & Technology
4th Author's Name Koichi IIYAMA
4th Author's Affiliation Kanazawa Univ. Graduate School of Natural Science & Technology
5th Author's Name Keisuke OHDAIRA
5th Author's Affiliation Japan Advanced Institute of Science and Technology School of Materials Science
6th Author's Name Hideki MATHUMURA
6th Author's Affiliation Japan Advanced Institute of Science and Technology School of Materials Science
Date 2010-12-17
Paper # OPE2010-135
Volume (vol) vol.110
Number (no) 352
Page pp.pp.-
#Pages 4
Date of Issue