| Presentation | 2011-01-14 AlGaN/GaN HFETs using highly C-doped layers on Si substrate Takuya Kokawa, Syusuke Kaya, Nariaki Ikeda, Sadahiro Kato, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this paper, AlGaN/GaN/HFET devices on Si substrates were fabricated, and the device characteristics were examined. In order to improve a trade-off between the specific on-resistance(RonA) and the breakdown voltage(Vb), carbon was highly doped into a GaN layer, resulting in an improvement of Vb per unit gate-drain length (Lgd) without degrading on-state characteristics or current collapse. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / HFET / Si substrate / C doping / on-resistance / breakdown voltage |
| Paper # | ED2010-185,MW2010-145 |
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| Conference Information | |
| Committee | MW |
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| Conference Date | 2011/1/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Microwaves (MW) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | AlGaN/GaN HFETs using highly C-doped layers on Si substrate |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | HFET |
| Keyword(3) | Si substrate |
| Keyword(4) | C doping |
| Keyword(5) | on-resistance |
| Keyword(6) | breakdown voltage |
| 1st Author's Name | Takuya Kokawa |
| 1st Author's Affiliation | Advanced Power Device Research Association() |
| 2nd Author's Name | Syusuke Kaya |
| 2nd Author's Affiliation | Advanced Power Device Research Association |
| 3rd Author's Name | Nariaki Ikeda |
| 3rd Author's Affiliation | Advanced Power Device Research Association |
| 4th Author's Name | Sadahiro Kato |
| 4th Author's Affiliation | Advanced Power Device Research Association |
| Date | 2011-01-14 |
| Paper # | ED2010-185,MW2010-145 |
| Volume (vol) | vol.110 |
| Number (no) | 359 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |