| Presentation | 2011-01-14 III-V quantum well channel MOSFET with back electrode Toru KANAZAWA, Ryosuke TERAO, Yutaro YAMAGUCHI, Shunsuke IKEDA, Yoshiharu YONAI, Atsushi KATO, Yasuyuki MIYAMOTO, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | III-V compound semiconductors are one of the candidates as high mobility channel materials for future high performance logic CMOS circuits. We demonstrated InP/InGaAs/InP quantum well channel MOSFET with a back electrode bonded on Si substrate using a benzo cyclo btene (BCB) as an adhesive layer. The thin body channel structure was transferred to Si substrate with smooth interfaces. In the I-V measurement with dual-gate operation, the drain current of 880 mA/mm and peak transconductance of 450 mS/mm were achieved. The saturation characteristics and on/off ratio were also improved. Resultingly, we demonstrate the capability of back electrode structures for high drivability MOSFET. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOSFET / III-V compound semiconductor / high mobility channel / bonding |
| Paper # | ED2010-188,MW2010-148 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2011/1/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | III-V quantum well channel MOSFET with back electrode |
| Sub Title (in English) | |
| Keyword(1) | MOSFET |
| Keyword(2) | III-V compound semiconductor |
| Keyword(3) | high mobility channel |
| Keyword(4) | bonding |
| 1st Author's Name | Toru KANAZAWA |
| 1st Author's Affiliation | Dept. of Physical Electronics, Tokyo Institute of Technology() |
| 2nd Author's Name | Ryosuke TERAO |
| 2nd Author's Affiliation | Dept. of Physical Electronics, Tokyo Institute of Technology |
| 3rd Author's Name | Yutaro YAMAGUCHI |
| 3rd Author's Affiliation | Dept. of Physical Electronics, Tokyo Institute of Technology |
| 4th Author's Name | Shunsuke IKEDA |
| 4th Author's Affiliation | Dept. of Physical Electronics, Tokyo Institute of Technology |
| 5th Author's Name | Yoshiharu YONAI |
| 5th Author's Affiliation | Dept. of Physical Electronics, Tokyo Institute of Technology |
| 6th Author's Name | Atsushi KATO |
| 6th Author's Affiliation | Dept. of Physical Electronics, Tokyo Institute of Technology |
| 7th Author's Name | Yasuyuki MIYAMOTO |
| 7th Author's Affiliation | Dept. of Physical Electronics, Tokyo Institute of Technology |
| Date | 2011-01-14 |
| Paper # | ED2010-188,MW2010-148 |
| Volume (vol) | vol.110 |
| Number (no) | 358 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |