| Presentation | 2011-01-14 Developing GaN HEMTs for Ka-Band with 20W Keiichi MATSUSHITA, Hiroyuki SAKURAI, Yasushi KASHIWABARA, Kazutoshi MASUDA, Kan ONODERA, Hisao KAWASAKI, Kazutaka TAKAGI, Yoshiharu TAKADA, Kunio TSUDA, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | AlGaN/GaN High Electron Mobility Transistors(HEMTs) were developed for Ka-band. The developed device showed 138 GHz of fmax, which depended on the thickness of the A1GaN barrier layer and the gate length. It had a 6.4mm gate periphery on a metal carrier plate. The output power achieved 20W with impedance matching circuits. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN / GaN / HEMT / Ka-band |
| Paper # | ED2010-186,MW2010-146 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 2011/1/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Developing GaN HEMTs for Ka-Band with 20W |
| Sub Title (in English) | |
| Keyword(1) | AlGaN |
| Keyword(2) | GaN |
| Keyword(3) | HEMT |
| Keyword(4) | Ka-band |
| 1st Author's Name | Keiichi MATSUSHITA |
| 1st Author's Affiliation | Microwave Solid-state Engineering Dept., Komukai Operations, Toshiba Corporation() |
| 2nd Author's Name | Hiroyuki SAKURAI |
| 2nd Author's Affiliation | Microwave Solid-state Engineering Dept., Komukai Operations, Toshiba Corporation |
| 3rd Author's Name | Yasushi KASHIWABARA |
| 3rd Author's Affiliation | Microwave Solid-state Engineering Dept., Komukai Operations, Toshiba Corporation |
| 4th Author's Name | Kazutoshi MASUDA |
| 4th Author's Affiliation | Microwave Solid-state Engineering Dept., Komukai Operations, Toshiba Corporation |
| 5th Author's Name | Kan ONODERA |
| 5th Author's Affiliation | Microwave Solid-state Engineering Dept., Komukai Operations, Toshiba Corporation |
| 6th Author's Name | Hisao KAWASAKI |
| 6th Author's Affiliation | Microwave Solid-state Engineering Dept., Komukai Operations, Toshiba Corporation |
| 7th Author's Name | Kazutaka TAKAGI |
| 7th Author's Affiliation | Microwave Solid-state Engineering Dept., Komukai Operations, Toshiba Corporation |
| 8th Author's Name | Yoshiharu TAKADA |
| 8th Author's Affiliation | Electron Devices Laboratory, R&D Center, Toshiba Corporation |
| 9th Author's Name | Kunio TSUDA |
| 9th Author's Affiliation | Electron Devices Laboratory, R&D Center, Toshiba Corporation |
| Date | 2011-01-14 |
| Paper # | ED2010-186,MW2010-146 |
| Volume (vol) | vol.110 |
| Number (no) | 358 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |