Presentation	2010-12-17 Monte Carlo Simulations of Nanogate In_<0.7>Ga_<0.3>As/InAs/In_<0.7>Ga_<0.3>As Composite Channel HEMTs Akira ENDOH, Issei WATANABE, Takashi MIMURA,
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Abstract(in English)	To achieve high-speed operations of InP-based InAlAs/InGaAs HEMTs, an InGaAs/InAs/InGaAs composite layer is used as a channel. In this work, we carried out Monte Carlo (MC) simulations of In_<0.7>Ga_<0.3>As/InAs/In_<0.7>Ga_<0.3>As composite channel HEMTs and examined the effect of the channel structure on the device performance. The InAs layer with a thickness range from 2 to 8 nm was introduced into the In_<0.7>Ga_<0.3>As channel. Even for the InAs layer thickness of 2 nm, a twofold increase in the drain-source current I_, transconductance g_m and cutoff frequency f_T was seen. With further increasing the InAs layer thickness, the increase of I_, g_m and f_T was not so much. The increase in I_, g_m and f_T mainly results from the increase in the electron velocity by introducing the InAs layer into the channel. On the other hand, the increase in the electron density by introducing the InAs layer was small. Furthermore, we fabricated composite channel HEMTs and compared their device performance with those of In_<0.7>Ga_<0.3>As channel HEMTs.
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Keyword(in English)	In-based HEMTs / In_<0.7>Ga_<0.3>As/InAs/In_<0.7>Ga_<0.3>As / Composite channel / Monte Carlo simulations / Drain-source current / Transconductance / Cutoff frequency / Electron velocity
Paper #	ED2010-168
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Conference Information
Committee	ED
Conference Date	2010/12/9(1days)
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Registration To	Electron Devices (ED)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Monte Carlo Simulations of Nanogate In_<0.7>Ga_<0.3>As/InAs/In_<0.7>Ga_<0.3>As Composite Channel HEMTs
Sub Title (in English)
Keyword(1)	In-based HEMTs
Keyword(2)	In_<0.7>Ga_<0.3>As/InAs/In_<0.7>Ga_<0.3>As
Keyword(3)	Composite channel
Keyword(4)	Monte Carlo simulations
Keyword(5)	Drain-source current
Keyword(6)	Transconductance
Keyword(7)	Cutoff frequency
Keyword(8)	Electron velocity
1st Author's Name	Akira ENDOH
1st Author's Affiliation	National Institute of Information and Communications Technology:Fujitsu Laboratories Ltd.()
2nd Author's Name	Issei WATANABE
2nd Author's Affiliation	National Institute of Information and Communications Technology
3rd Author's Name	Takashi MIMURA
3rd Author's Affiliation	Fujitsu Laboratories Ltd.:National Institute of Information and Communications Technology
Date	2010-12-17
Paper #	ED2010-168
Volume (vol)	vol.110
Number (no)	342
Page	pp.pp.-
#Pages	6
Date of Issue