| Presentation | 2010-12-16 Coherent and Tunable Terahertz Emission from Nano-metric Field Effect Transistor at Room Temperature TOMBET Stephane BOUBANGA, Akira SATOU, Victor RYZHII, Taiichi OTSUJI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. We establish that the physical mechanism of the coherent TeraHertz emission is related to the plasma waves driven by simultaneous current and optical excitation. A significant shift of the plasma frequency and the narrowing of the emission with increasing channel's current are observed and explained as due to the increase of the carriers' density and drift velocity. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | terahertz / emission / plasma wave |
| Paper # | ED2010-164 |
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| Committee | ED |
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| Conference Date | 2010/12/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Coherent and Tunable Terahertz Emission from Nano-metric Field Effect Transistor at Room Temperature |
| Sub Title (in English) | |
| Keyword(1) | terahertz |
| Keyword(2) | emission |
| Keyword(3) | plasma wave |
| 1st Author's Name | TOMBET Stephane BOUBANGA |
| 1st Author's Affiliation | Research Institute of Electrical Communication, Tohoku University() |
| 2nd Author's Name | Akira SATOU |
| 2nd Author's Affiliation | Research Institute of Electrical Communication, Tohoku University |
| 3rd Author's Name | Victor RYZHII |
| 3rd Author's Affiliation | Computational Nanoelectronics Laboratory, University of Aizu |
| 4th Author's Name | Taiichi OTSUJI |
| 4th Author's Affiliation | Research Institute of Electrical Communication, Tohoku University |
| Date | 2010-12-16 |
| Paper # | ED2010-164 |
| Volume (vol) | vol.110 |
| Number (no) | 342 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |