| Presentation | 2010-12-16 Terahertz Oscillating Resonant Tunneling Diode at Room Temperature Safumi SUZUKI, Masahiro ASADA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We report on recent results of terahertz oscillators using resonant tunneling diodes. We achieved a fundamental oscillation frequency up to 831 GHz with RTD having high available current density and low capacitance, and up to 1.04 THz with RTD having thin barrier and graded emitter structures. The output power in single oscillator was increased to 200μW at 443 GHz by offset-fed slot antenna, and coherent power combination in multi element array due to mutual injection locking was achieved. Frequency direct modulation using VCO characteristics was also demonstrated for THz wireless communication. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | resonant tunneling diodes / terahertz oscillator |
| Paper # | ED2010-158 |
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| Committee | ED |
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| Conference Date | 2010/12/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Terahertz Oscillating Resonant Tunneling Diode at Room Temperature |
| Sub Title (in English) | |
| Keyword(1) | resonant tunneling diodes |
| Keyword(2) | terahertz oscillator |
| 1st Author's Name | Safumi SUZUKI |
| 1st Author's Affiliation | Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology() |
| 2nd Author's Name | Masahiro ASADA |
| 2nd Author's Affiliation | Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology |
| Date | 2010-12-16 |
| Paper # | ED2010-158 |
| Volume (vol) | vol.110 |
| Number (no) | 342 |
| Page | pp.pp.- |
| #Pages | 6 |
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