Presentation | 2010-11-12 Vertical Heterojunction Field-Effect Transistors on Low Dislocation Density GaN Substrates Masaya Okada, Yu Saitoh, Mitsunori Yokoyama, Ken Nakata, Seiji Yaegassi, Koji Katayama, Masaki Ueno, Makoto Kiyama, Tukuru Katsuyama, Takao Nakamura, Masaki Ueno, Makoto Kiyama, Tukuru Katsuyama, Takao Nakamura, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A novel vertical heterojunction field-effect transistors (VHFETs) with re-grown AlGaN/GaN two-dimensional electron gas channels on low dislocation density free-standing GaN substrates have been developed. The VHFETs exhibit a specific on-resistance of 7.6 mΩcm^2 at a threshold voltage of -1.1 V and a breakdown voltage of 672 V. The breakdown voltage and the figure of merit are the highest among those of the GaN-based vertical transistors ever reported. It was also demonstrated that the threshold voltage can be controlled by the thickness of A1GaN layers and a normally-off operation is achieved. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | AlGaN/GaN / heterojunction field-effect transistor / GaN substrate |
Paper # | ED2010-157,CPM2010-123,LQE2010-113 |
Date of Issue |
Conference Information | |
Committee | LQE |
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Conference Date | 2010/11/4(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
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Assistant |
Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Vertical Heterojunction Field-Effect Transistors on Low Dislocation Density GaN Substrates |
Sub Title (in English) | |
Keyword(1) | AlGaN/GaN |
Keyword(2) | heterojunction field-effect transistor |
Keyword(3) | GaN substrate |
1st Author's Name | Masaya Okada |
1st Author's Affiliation | Sumitomo Electric Industries, Ltd.() |
2nd Author's Name | Yu Saitoh |
2nd Author's Affiliation | Sumitomo Electric Industries, Ltd. |
3rd Author's Name | Mitsunori Yokoyama |
3rd Author's Affiliation | Sumitomo Electric Industries, Ltd. |
4th Author's Name | Ken Nakata |
4th Author's Affiliation | Sumitomo Electric Industries, Ltd. |
5th Author's Name | Seiji Yaegassi |
5th Author's Affiliation | Sumitomo Electric Industries, Ltd. |
6th Author's Name | Koji Katayama |
6th Author's Affiliation | Sumitomo Electric Industries, Ltd. |
7th Author's Name | Masaki Ueno |
7th Author's Affiliation | Sumitomo Electric Industries, Ltd. |
8th Author's Name | Makoto Kiyama |
8th Author's Affiliation | Sumitomo Electric Industries, Ltd. |
9th Author's Name | Tukuru Katsuyama |
9th Author's Affiliation | Sumitomo Electric Industries, Ltd. |
10th Author's Name | Takao Nakamura |
10th Author's Affiliation | Sumitomo Electric Industries, Ltd. |
11th Author's Name | Masaki Ueno |
11th Author's Affiliation | Sumitomo Electric Industries, Ltd. |
12th Author's Name | Makoto Kiyama |
12th Author's Affiliation | Sumitomo Electric Industries, Ltd. |
13th Author's Name | Tukuru Katsuyama |
13th Author's Affiliation | Sumitomo Electric Industries, Ltd. |
14th Author's Name | Takao Nakamura |
14th Author's Affiliation | Sumitomo Electric Industries, Ltd. |
Date | 2010-11-12 |
Paper # | ED2010-157,CPM2010-123,LQE2010-113 |
Volume (vol) | vol.110 |
Number (no) | 273 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |