Presentation 2010-11-12
Vertical Heterojunction Field-Effect Transistors on Low Dislocation Density GaN Substrates
Masaya Okada, Yu Saitoh, Mitsunori Yokoyama, Ken Nakata, Seiji Yaegassi, Koji Katayama, Masaki Ueno, Makoto Kiyama, Tukuru Katsuyama, Takao Nakamura, Masaki Ueno, Makoto Kiyama, Tukuru Katsuyama, Takao Nakamura,
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Abstract(in English) A novel vertical heterojunction field-effect transistors (VHFETs) with re-grown AlGaN/GaN two-dimensional electron gas channels on low dislocation density free-standing GaN substrates have been developed. The VHFETs exhibit a specific on-resistance of 7.6 mΩcm^2 at a threshold voltage of -1.1 V and a breakdown voltage of 672 V. The breakdown voltage and the figure of merit are the highest among those of the GaN-based vertical transistors ever reported. It was also demonstrated that the threshold voltage can be controlled by the thickness of A1GaN layers and a normally-off operation is achieved.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) AlGaN/GaN / heterojunction field-effect transistor / GaN substrate
Paper # ED2010-157,CPM2010-123,LQE2010-113
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Conference Information
Committee LQE
Conference Date 2010/11/4(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Vertical Heterojunction Field-Effect Transistors on Low Dislocation Density GaN Substrates
Sub Title (in English)
Keyword(1) AlGaN/GaN
Keyword(2) heterojunction field-effect transistor
Keyword(3) GaN substrate
1st Author's Name Masaya Okada
1st Author's Affiliation Sumitomo Electric Industries, Ltd.()
2nd Author's Name Yu Saitoh
2nd Author's Affiliation Sumitomo Electric Industries, Ltd.
3rd Author's Name Mitsunori Yokoyama
3rd Author's Affiliation Sumitomo Electric Industries, Ltd.
4th Author's Name Ken Nakata
4th Author's Affiliation Sumitomo Electric Industries, Ltd.
5th Author's Name Seiji Yaegassi
5th Author's Affiliation Sumitomo Electric Industries, Ltd.
6th Author's Name Koji Katayama
6th Author's Affiliation Sumitomo Electric Industries, Ltd.
7th Author's Name Masaki Ueno
7th Author's Affiliation Sumitomo Electric Industries, Ltd.
8th Author's Name Makoto Kiyama
8th Author's Affiliation Sumitomo Electric Industries, Ltd.
9th Author's Name Tukuru Katsuyama
9th Author's Affiliation Sumitomo Electric Industries, Ltd.
10th Author's Name Takao Nakamura
10th Author's Affiliation Sumitomo Electric Industries, Ltd.
11th Author's Name Masaki Ueno
11th Author's Affiliation Sumitomo Electric Industries, Ltd.
12th Author's Name Makoto Kiyama
12th Author's Affiliation Sumitomo Electric Industries, Ltd.
13th Author's Name Tukuru Katsuyama
13th Author's Affiliation Sumitomo Electric Industries, Ltd.
14th Author's Name Takao Nakamura
14th Author's Affiliation Sumitomo Electric Industries, Ltd.
Date 2010-11-12
Paper # ED2010-157,CPM2010-123,LQE2010-113
Volume (vol) vol.110
Number (no) 273
Page pp.pp.-
#Pages 4
Date of Issue