Presentation | 2010-11-11 Current control of AlGaN/GaN HEMT with multi-mesa nanochannels Kota OHI, Tamotsu HASHIZUME, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We proposed and characterized a multi-mesa-channel (MMC) AlGaN/GaN HEMT. By forming a periodic trench, the MMC HEMT has parallel mesa-shaped channels with two-dimensional electron gas (2DEG) surrounded by the gate electrode. The MMC HEMT exhibited a steeper IDS-VDS curve in linear region and a higher transconductance than the planar HEMT, in spite of the fact that the effective gate width of the MMC device is about half of that for the planar device. The MMC HEMT shows excellent current stability in saturation region. From the result of current collapse measurement, the influence of current collapse was weak for the MMC structure because the MMC structure is rather insensitive to change in the access resistance due to high impedance channel. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN / AlGaN / High Electron Mobility Transistor (HEMT) / Multi-Mesa-Channel (MMC) structure |
Paper # | ED2010-152,CPM2010-118,LQE2010-108 |
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Conference Information | |
Committee | LQE |
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Conference Date | 2010/11/4(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Current control of AlGaN/GaN HEMT with multi-mesa nanochannels |
Sub Title (in English) | |
Keyword(1) | GaN |
Keyword(2) | AlGaN |
Keyword(3) | High Electron Mobility Transistor (HEMT) |
Keyword(4) | Multi-Mesa-Channel (MMC) structure |
1st Author's Name | Kota OHI |
1st Author's Affiliation | Graduate School of Information Science and Technology, Hokkaido University:Research Center for Integrated Quantum Electronics, Hokkaido University() |
2nd Author's Name | Tamotsu HASHIZUME |
2nd Author's Affiliation | Graduate School of Information Science and Technology, Hokkaido University:Research Center for Integrated Quantum Electronics, Hokkaido University:JST-CREST |
Date | 2010-11-11 |
Paper # | ED2010-152,CPM2010-118,LQE2010-108 |
Volume (vol) | vol.110 |
Number (no) | 273 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |