Presentation 2010-11-11
High Efficiency AlInN Ultraviolet Photodiodes on AlN Templates
Yusuke SAKAI, Junki ICHIKAWA, Takashi EGAWA,
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Abstract(in English) We characterize AlInN/GaN structures on AN templates grown by metal organic chemical vapor deposition and demonstrate Schottky AlInN ultraviolet photodiodes. AlInN growth parameters were investigated, resulting in AlInN/GaN structures with both smooth interface and good surface morphology. Moreover, compared to AlInN/GaN structures on sapphires, those on AlN templates are found to have better structural properties. Fabricated photodiodes on AlN templates show the good responsivity, corresponding to more than 10 % as quantum efficiency. This value is higher than that of photodiodes on sapphires. Optimized AlInN/GaN structure on AIN template is a promising candidate for realizing high-efficiency ultraviolet photodiode.
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Keyword(in English) AlInN / Photodiode / AlN Template / MOCVD
Paper # ED2010-151,CPM2010-117,LQE2010-107
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Committee LQE
Conference Date 2010/11/4(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) High Efficiency AlInN Ultraviolet Photodiodes on AlN Templates
Sub Title (in English)
Keyword(1) AlInN
Keyword(2) Photodiode
Keyword(3) AlN Template
Keyword(4) MOCVD
1st Author's Name Yusuke SAKAI
1st Author's Affiliation Research Center for Nano-Device and System, Nagoya Institute of Technology()
2nd Author's Name Junki ICHIKAWA
2nd Author's Affiliation Research Center for Nano-Device and System, Nagoya Institute of Technology
3rd Author's Name Takashi EGAWA
3rd Author's Affiliation Research Center for Nano-Device and System, Nagoya Institute of Technology
Date 2010-11-11
Paper # ED2010-151,CPM2010-117,LQE2010-107
Volume (vol) vol.110
Number (no) 273
Page pp.pp.-
#Pages 5
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