| Presentation | 2010-11-11 Carrier diffusion dynamics in InGaN/GaN SQW studied by spatial and temporal resolved PL spectroscopy : Efficiency droop mechanism assessed by SNOM Akira Hashiya, Akio Kaneta, Mitsuru Funato, Yoichi Kawakami, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The temporally and spatially resolved photoluminescence (PL) mappings under the various carrier densities have been performed for a green emitting InGaN/GaN single quantum well (SQW) by scanning near-field microscopy (SNOM) at room temperature to clarify the efficiency droop phenomena. The PL intensity mapping shows that the strong PL intensity domains, sizes of which were several hundred nm and were surrounded by weak PL intensity domains. The time resolved PL results revealed that carriers diffuse out of the probe aperture under high excitation condition at the strong PL intensity domains. Moreover, macroscopic PL measurements under the same high excitation density showed faster nonradiative recombination processes and saturation of the PL intensity, which suggest efficiency droop. These findings led us to a conclusion that the main factor of efficiency droop is carrier migration from the strong PL intensity area to weak one, which is enhanced under the high photoexcitation condition. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SNOM / InGaN / SQW / Efficiency droop / carrier life time |
| Paper # | ED2010-149,CPM2010-115,LQE2010-105 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2010/11/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Carrier diffusion dynamics in InGaN/GaN SQW studied by spatial and temporal resolved PL spectroscopy : Efficiency droop mechanism assessed by SNOM |
| Sub Title (in English) | |
| Keyword(1) | SNOM |
| Keyword(2) | InGaN |
| Keyword(3) | SQW |
| Keyword(4) | Efficiency droop |
| Keyword(5) | carrier life time |
| 1st Author's Name | Akira Hashiya |
| 1st Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University() |
| 2nd Author's Name | Akio Kaneta |
| 2nd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 3rd Author's Name | Mitsuru Funato |
| 3rd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 4th Author's Name | Yoichi Kawakami |
| 4th Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| Date | 2010-11-11 |
| Paper # | ED2010-149,CPM2010-115,LQE2010-105 |
| Volume (vol) | vol.110 |
| Number (no) | 273 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |