Presentation 2010-11-11
ELO-AlN on trench-patterned AlN/sapphire by low-pressure HVPE
Kohei FUJITA, Hideto MIYAKE, Kazumasa HIRAMATSU, Jyun NORIMATSU, Hideki HIRAYAMA,
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Abstract(in English) We have fabricated crack-free thick AlN films with low threading dislocation density (TDD) on trench-patterned AlN/Sapphire substrates for application to deep-ultraviolet (DUV) light-emitting diodes (LEDs) by low-pressure hydride vapor phase epitaxy (LP-HVPE). We systematically investigated mechanism of void structure formed by the epitaxial lateral overgrowth (ELO) process. It was found that the height of void-tops was proportional to the groove width and the growth rate ratio of vertical to lateral. And, the height of void-bottoms was proportional to the parameter defined as the square of groove-width devided by the groove-depth. Furthermore, the growth rate ratio of vertical to lateral increased with increasing growth temperature or increasing V/III ratio.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) HVPE / AlN / ELO / crack-free
Paper # ED2010-147,CPM2010-113,LQE2010-103
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Committee LQE
Conference Date 2010/11/4(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) ELO-AlN on trench-patterned AlN/sapphire by low-pressure HVPE
Sub Title (in English)
Keyword(1) HVPE
Keyword(2) AlN
Keyword(3) ELO
Keyword(4) crack-free
1st Author's Name Kohei FUJITA
1st Author's Affiliation Faculty of Engineering, Mie University()
2nd Author's Name Hideto MIYAKE
2nd Author's Affiliation Faculty of Engineering, Mie University
3rd Author's Name Kazumasa HIRAMATSU
3rd Author's Affiliation Faculty of Engineering, Mie University
4th Author's Name Jyun NORIMATSU
4th Author's Affiliation RIKEN
5th Author's Name Hideki HIRAYAMA
5th Author's Affiliation RIKEN
Date 2010-11-11
Paper # ED2010-147,CPM2010-113,LQE2010-103
Volume (vol) vol.110
Number (no) 273
Page pp.pp.-
#Pages 4
Date of Issue